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DMN10H099SFG-7

DMN10H099SFG-7

For Reference Only

Part Number DMN10H099SFG-7
PNEDA Part # DMN10H099SFG-7
Description MOSFET N-CH 100V 4.2A PWRDI3333
Manufacturer Diodes Incorporated
Unit Price Request a Quote
In Stock 7,002
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 20 - May 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

DMN10H099SFG-7 Resources

Brand Diodes Incorporated
ECAD Module ECAD
Mfr. Part NumberDMN10H099SFG-7
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
DMN10H099SFG-7, DMN10H099SFG-7 Datasheet (Total Pages: 6, Size: 259.47 KB)
PDFDMN10H099SFG-13 Datasheet Cover
DMN10H099SFG-13 Datasheet Page 2 DMN10H099SFG-13 Datasheet Page 3 DMN10H099SFG-13 Datasheet Page 4 DMN10H099SFG-13 Datasheet Page 5 DMN10H099SFG-13 Datasheet Page 6

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DMN10H099SFG-7 Specifications

ManufacturerDiodes Incorporated
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C4.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs80mOhm @ 3.3A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs25.2nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1172pF @ 50V
FET Feature-
Power Dissipation (Max)980mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerDI3333-8
Package / Case8-PowerVDFN

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