Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

DMN2065UW-7

DMN2065UW-7

For Reference Only

Part Number DMN2065UW-7
PNEDA Part # DMN2065UW-7
Description MOSFET N CH 20V 2.8A SOT323
Manufacturer Diodes Incorporated
Unit Price Request a Quote
In Stock 361,446
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 12 - Jun 17 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

DMN2065UW-7 Resources

Brand Diodes Incorporated
ECAD Module ECAD
Mfr. Part NumberDMN2065UW-7
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
DMN2065UW-7, DMN2065UW-7 Datasheet (Total Pages: 7, Size: 602.49 KB)
PDFDMN2065UW-7 Datasheet Cover
DMN2065UW-7 Datasheet Page 2 DMN2065UW-7 Datasheet Page 3 DMN2065UW-7 Datasheet Page 4 DMN2065UW-7 Datasheet Page 5 DMN2065UW-7 Datasheet Page 6 DMN2065UW-7 Datasheet Page 7

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • DMN2065UW-7 Datasheet
  • where to find DMN2065UW-7
  • Diodes Incorporated

  • Diodes Incorporated DMN2065UW-7
  • DMN2065UW-7 PDF Datasheet
  • DMN2065UW-7 Stock

  • DMN2065UW-7 Pinout
  • Datasheet DMN2065UW-7
  • DMN2065UW-7 Supplier

  • Diodes Incorporated Distributor
  • DMN2065UW-7 Price
  • DMN2065UW-7 Distributor

DMN2065UW-7 Specifications

ManufacturerDiodes Incorporated
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C2.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4.5V
Rds On (Max) @ Id, Vgs56mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs5.4nC @ 4.5V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds400pF @ 10V
FET Feature-
Power Dissipation (Max)430mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-323
Package / CaseSC-70, SOT-323

The Products You May Be Interested In

PSMN8R7-100YSFX

Nexperia

Manufacturer

Nexperia USA Inc.

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

100A

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

38.5nC @ 10V

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

198W

Operating Temperature

175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

LFPAK56, Power-SO8

Package / Case

SC-100, SOT-669

ATP203-TL-H

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

75A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

8.2mOhm @ 38A, 10V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

44nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2750pF @ 10V

FET Feature

-

Power Dissipation (Max)

50W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

ATPAK

Package / Case

ATPAK (2 leads+tab)

2SK3386(0)-Z-E1-AZ

Renesas Electronics America

Manufacturer

Renesas Electronics America

Series

-

FET Type

-

Technology

-

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

-

Supplier Device Package

-

Package / Case

-

PMZ200UNEYL

Nexperia

Manufacturer

Nexperia USA Inc.

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

1.4A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.5V, 4.5V

Rds On (Max) @ Id, Vgs

250mOhm @ 1.4A, 4.5V

Vgs(th) (Max) @ Id

950mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs

2.7nC @ 4.5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

89pF @ 15V

FET Feature

-

Power Dissipation (Max)

350mW (Ta), 6.25W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DFN1006-3

Package / Case

SC-101, SOT-883

SIHG17N60D-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

17A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

340mOhm @ 8A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

90nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1780pF @ 100V

FET Feature

-

Power Dissipation (Max)

277.8W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247AC

Package / Case

TO-247-3

Recently Sold

X9C104SI

X9C104SI

Renesas Electronics America Inc.

IC DGTL POT 100KOHM 100TAP 8SOIC

IHLP5050FDER3R3M01

IHLP5050FDER3R3M01

Vishay Dale

FIXED IND 3.3UH 18A 6.8 MOHM SMD

AD9240AS

AD9240AS

Analog Devices

IC ADC 14BIT PIPELINED 44MQFP

MPZ2012S300AT000

MPZ2012S300AT000

TDK

FERRITE BEAD 30 OHM 0805 1LN

H22A4

H22A4

ON Semiconductor

SENSOR OPT SLOT PHOTOTRAN PC PIN

XC7K70T-2FBG484I

XC7K70T-2FBG484I

Xilinx

IC FPGA 285 I/O 484FCBGA

NC7SZ08P5X

NC7SZ08P5X

ON Semiconductor

IC GATE AND 1CH 2-INP SC70-5

B160B-13-F

B160B-13-F

Diodes Incorporated

DIODE SCHOTTKY 60V 1A SMB

T491D106K050AT

T491D106K050AT

KEMET

CAP TANT 10UF 10% 50V 2917

NOIP2SE1300A-QDI

NOIP2SE1300A-QDI

ON Semiconductor

IC IMAGE SENSOR 1.3MP 48LCC

ZHCS400TA

ZHCS400TA

Diodes Incorporated

DIODE SCHOTTKY 40V 400MA SOD323

MT40A256M16GE-083E IT:B

MT40A256M16GE-083E IT:B

Micron Technology Inc.

IC DRAM 4G PARALLEL 96FBGA