Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

DMN2250UFB-7B

DMN2250UFB-7B

For Reference Only

Part Number DMN2250UFB-7B
PNEDA Part # DMN2250UFB-7B
Description MOSFET N-CH 20V 1.35A 3DFN
Manufacturer Diodes Incorporated
Unit Price Request a Quote
In Stock 8,748
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 17 - Jun 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

DMN2250UFB-7B Resources

Brand Diodes Incorporated
ECAD Module ECAD
Mfr. Part NumberDMN2250UFB-7B
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
DMN2250UFB-7B, DMN2250UFB-7B Datasheet (Total Pages: 6, Size: 235.12 KB)
PDFDMN2250UFB-7B Datasheet Cover
DMN2250UFB-7B Datasheet Page 2 DMN2250UFB-7B Datasheet Page 3 DMN2250UFB-7B Datasheet Page 4 DMN2250UFB-7B Datasheet Page 5 DMN2250UFB-7B Datasheet Page 6

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • DMN2250UFB-7B Datasheet
  • where to find DMN2250UFB-7B
  • Diodes Incorporated

  • Diodes Incorporated DMN2250UFB-7B
  • DMN2250UFB-7B PDF Datasheet
  • DMN2250UFB-7B Stock

  • DMN2250UFB-7B Pinout
  • Datasheet DMN2250UFB-7B
  • DMN2250UFB-7B Supplier

  • Diodes Incorporated Distributor
  • DMN2250UFB-7B Price
  • DMN2250UFB-7B Distributor

DMN2250UFB-7B Specifications

ManufacturerDiodes Incorporated
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C1.35A (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Rds On (Max) @ Id, Vgs170mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs3.1nC @ 10V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds94pF @ 16V
FET Feature-
Power Dissipation (Max)500mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageX1-DFN1006-3
Package / Case3-UFDFN

The Products You May Be Interested In

NVMFS5844NLWFT3G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

11.2A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

12mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

2.3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

30nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1460pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.7W (Ta), 107W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

5-DFN (5x6) (8-SOFL)

Package / Case

8-PowerTDFN

SI7485DP-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

12.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

7.3mOhm @ 20A, 4.5V

Vgs(th) (Max) @ Id

900mV @ 1mA

Gate Charge (Qg) (Max) @ Vgs

150nC @ 5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

1.8W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® SO-8

Package / Case

PowerPAK® SO-8

SQJA37EP-T1_GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

Automotive, AEC-Q101, TrenchFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

30A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

9.2mOhm @ 6A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

100nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4900pF @ 25V

FET Feature

-

Power Dissipation (Max)

45W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® SO-8

Package / Case

PowerPAK® SO-8

IRFZ48PBF

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

50A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

18mOhm @ 43A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

110nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2400pF @ 25V

FET Feature

-

Power Dissipation (Max)

190W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

PMZ1200UPEYL

Nexperia

Manufacturer

Nexperia USA Inc.

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

410mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.5V, 4.5V

Rds On (Max) @ Id, Vgs

1.4Ohm @ 410mA, 4.5V

Vgs(th) (Max) @ Id

950mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs

1.2nC @ 4.5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

43.2pF @ 15V

FET Feature

-

Power Dissipation (Max)

310mW (Ta), 1.67W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DFN1006-3

Package / Case

SC-101, SOT-883

Recently Sold

ADP2164ACPZ-1.8-R7

ADP2164ACPZ-1.8-R7

Analog Devices

IC REG BUCK 1.8V 4A 16LFCSP

7447789002

7447789002

Wurth Electronics

FIXED IND 2.2UH 4.02A 23 MOHM

DM74LS14M

DM74LS14M

ON Semiconductor

IC INVERTER SCHMITT 6CH 14SOIC

NTF2955T1G

NTF2955T1G

ON Semiconductor

MOSFET P-CH 60V 1.7A SOT-223

7443556350

7443556350

Wurth Electronics

FIXED IND 3.5UH 22.5A 3.1 MOHM

REF192GS

REF192GS

Analog Devices

IC VREF SERIES 2.5V 8SOIC

L7805CD2T-TR

L7805CD2T-TR

STMicroelectronics

IC REG LINEAR 5V 1.5A D2PAK

MC33072DR2G

MC33072DR2G

ON Semiconductor

IC OPAMP GP 2 CIRCUIT 8SOIC

LTV-817S-TA1-A

LTV-817S-TA1-A

Lite-On Inc.

OPTOISOLATR 5KV TRANSISTOR 4-SMD

06035C104KAT2A

06035C104KAT2A

CAP CER 0.1UF 50V X7R 0603

FDV302P

FDV302P

ON Semiconductor

MOSFET P-CH 25V 120MA SOT-23

TLMY1000-GS08

TLMY1000-GS08

Vishay Semiconductor Opto Division

LED YELLOW 0603 SMD