DMN3024LK3-13
For Reference Only
| Part Number | DMN3024LK3-13 |
| PNEDA Part # | DMN3024LK3-13 |
| Description | MOSFET N-CH 30V 9.78A DPAK |
| Manufacturer | Diodes Incorporated |
| Unit Price | Request a Quote |
| In Stock | 20,904 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 18 - Jun 23 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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DMN3024LK3-13 Resources
| Brand | Diodes Incorporated |
| ECAD Module |
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| Mfr. Part Number | DMN3024LK3-13 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
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DMN3024LK3-13 Specifications
| Manufacturer | Diodes Incorporated |
| Series | - |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 9.78A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 24mOhm @ 7A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 12.9nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 608pF @ 15V |
| FET Feature | - |
| Power Dissipation (Max) | 2.17W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-252-3 |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 150V Current - Continuous Drain (Id) @ 25°C 5.1A (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 43mOhm @ 3.1A, 10V Vgs(th) (Max) @ Id 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs 38nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1647pF @ 75V FET Feature - Power Dissipation (Max) 2.5W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SO Package / Case 8-SOIC (0.154", 3.90mm Width) |
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