DMN3026LVTQ-13
For Reference Only
| Part Number | DMN3026LVTQ-13 |
| PNEDA Part # | DMN3026LVTQ-13 |
| Description | MOSFET N-CH 30V 6.6A TSOT26 |
| Manufacturer | Diodes Incorporated |
| Unit Price | Request a Quote |
| In Stock | 7,740 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 17 - May 22 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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DMN3026LVTQ-13 Resources
| Brand | Diodes Incorporated |
| ECAD Module |
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| Mfr. Part Number | DMN3026LVTQ-13 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
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DMN3026LVTQ-13 Specifications
| Manufacturer | Diodes Incorporated |
| Series | - |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 6.6A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 23mOhm @ 6.5A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 12.5nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 643pF @ 15V |
| FET Feature | - |
| Power Dissipation (Max) | 1.2W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TSOT-26 |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
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Manufacturer Infineon Technologies Series OptiMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 30A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 1.8mOhm @ 50A, 10V Vgs(th) (Max) @ Id 2V @ 85µA Gate Charge (Qg) (Max) @ Vgs 150nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 12000pF @ 20V FET Feature - Power Dissipation (Max) 2.5W (Ta), 125W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-TDSON-8-1 Package / Case 8-PowerTDFN |
