Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

DMN3026LVTQ-7

DMN3026LVTQ-7

For Reference Only

Part Number DMN3026LVTQ-7
PNEDA Part # DMN3026LVTQ-7
Description MOSFET N-CH 30V 6.6A TSOT26
Manufacturer Diodes Incorporated
Unit Price Request a Quote
In Stock 8,748
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 4 - May 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

DMN3026LVTQ-7 Resources

Brand Diodes Incorporated
ECAD Module ECAD
Mfr. Part NumberDMN3026LVTQ-7
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
DMN3026LVTQ-7, DMN3026LVTQ-7 Datasheet (Total Pages: 8, Size: 406.56 KB)
PDFDMN3026LVTQ-7 Datasheet Cover
DMN3026LVTQ-7 Datasheet Page 2 DMN3026LVTQ-7 Datasheet Page 3 DMN3026LVTQ-7 Datasheet Page 4 DMN3026LVTQ-7 Datasheet Page 5 DMN3026LVTQ-7 Datasheet Page 6 DMN3026LVTQ-7 Datasheet Page 7 DMN3026LVTQ-7 Datasheet Page 8

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • DMN3026LVTQ-7 Datasheet
  • where to find DMN3026LVTQ-7
  • Diodes Incorporated

  • Diodes Incorporated DMN3026LVTQ-7
  • DMN3026LVTQ-7 PDF Datasheet
  • DMN3026LVTQ-7 Stock

  • DMN3026LVTQ-7 Pinout
  • Datasheet DMN3026LVTQ-7
  • DMN3026LVTQ-7 Supplier

  • Diodes Incorporated Distributor
  • DMN3026LVTQ-7 Price
  • DMN3026LVTQ-7 Distributor

DMN3026LVTQ-7 Specifications

ManufacturerDiodes Incorporated
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C6.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs23mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs12.5nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds643pF @ 15V
FET Feature-
Power Dissipation (Max)1.2W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTSOT-26
Package / CaseSOT-23-6 Thin, TSOT-23-6

The Products You May Be Interested In

SFT1342-TL-E

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

12A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4V, 10V

Rds On (Max) @ Id, Vgs

62mOhm @ 6A, 10V

Vgs(th) (Max) @ Id

2.6V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

26nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1150pF @ 20V

FET Feature

-

Power Dissipation (Max)

1W (Ta), 15W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DPAK/TP-FA

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

RRL025P03FRATR

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

Automotive, AEC-Q101

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

2.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4V, 10V

Rds On (Max) @ Id, Vgs

75mOhm @ 2.5A, 10V

Vgs(th) (Max) @ Id

2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

12nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

480pF @ 10V

FET Feature

-

Power Dissipation (Max)

1W (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TUMT6

Package / Case

6-SMD, Flat Leads

SI4752DY-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

SkyFET®, TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

25A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

5.5mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

2.2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

43nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1700pF @ 15V

FET Feature

Schottky Diode (Body)

Power Dissipation (Max)

3W (Ta), 6.25W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SO

Package / Case

8-SOIC (0.154", 3.90mm Width)

SI5446DU-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

25A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

6.4mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

30nC @ 10V

Vgs (Max)

+20V, -16V

Input Capacitance (Ciss) (Max) @ Vds

1610pF @ 15V

FET Feature

-

Power Dissipation (Max)

31W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® ChipFet Single

Package / Case

PowerPAK® ChipFET™ Single

SQD07N25-350H_GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

250V

Current - Continuous Drain (Id) @ 25°C

7A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

350mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

3.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

29nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1205pF @ 25V

FET Feature

-

Power Dissipation (Max)

71W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-252AA

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Recently Sold

HCPL-0531-500E

HCPL-0531-500E

Broadcom

OPTOISO 3.75KV 2CH TRANS 8SOIC

AD8033ARZ

AD8033ARZ

Analog Devices

IC OPAMP VFB 1 CIRCUIT 8SOIC

FNM-30

FNM-30

Eaton - Bussmann Electrical Division

FUSE CARTRIDGE 30A 250VAC 5AG

NC7WZ132K8X

NC7WZ132K8X

ON Semiconductor

IC GATE NAND SCHMITT 2CH US8

SD103AW-E3-08

SD103AW-E3-08

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V SOD123

SMBJ14CA

SMBJ14CA

Littelfuse

TVS DIODE 14V 23.2V DO214AA

MT25QL256ABA8ESF-0SIT

MT25QL256ABA8ESF-0SIT

Micron Technology Inc.

IC FLASH 256M SPI 133MHZ 16SOP2

WSL12062L000FEA

WSL12062L000FEA

Vishay Dale

RES 0.002 OHM 1% 1/4W 1206

PC28F00BM29EWHA

PC28F00BM29EWHA

Micron Technology Inc.

IC FLASH 2G PARALLEL 64FBGA

SI4368DY-T1-E3

SI4368DY-T1-E3

Vishay Siliconix

MOSFET N-CH 30V 17A 8-SOIC

9DBL411BGILFT

9DBL411BGILFT

IDT, Integrated Device Technology

IC CLK FANOUT/BUFF DIFF 20TSSOP

BAV103,115

BAV103,115

Nexperia

DIODE GEN PURP 200V 250MA LLDS