Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

DMN30H4D0LFDE-7

DMN30H4D0LFDE-7

For Reference Only

Part Number DMN30H4D0LFDE-7
PNEDA Part # DMN30H4D0LFDE-7
Description MOSFET N-CH 300V .55A 6UDFN
Manufacturer Diodes Incorporated
Unit Price Request a Quote
In Stock 307,758
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 17 - Jun 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

DMN30H4D0LFDE-7 Resources

Brand Diodes Incorporated
ECAD Module ECAD
Mfr. Part NumberDMN30H4D0LFDE-7
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
DMN30H4D0LFDE-7, DMN30H4D0LFDE-7 Datasheet (Total Pages: 6, Size: 390.78 KB)
PDFDMN30H4D0LFDE-13 Datasheet Cover
DMN30H4D0LFDE-13 Datasheet Page 2 DMN30H4D0LFDE-13 Datasheet Page 3 DMN30H4D0LFDE-13 Datasheet Page 4 DMN30H4D0LFDE-13 Datasheet Page 5 DMN30H4D0LFDE-13 Datasheet Page 6

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • DMN30H4D0LFDE-7 Datasheet
  • where to find DMN30H4D0LFDE-7
  • Diodes Incorporated

  • Diodes Incorporated DMN30H4D0LFDE-7
  • DMN30H4D0LFDE-7 PDF Datasheet
  • DMN30H4D0LFDE-7 Stock

  • DMN30H4D0LFDE-7 Pinout
  • Datasheet DMN30H4D0LFDE-7
  • DMN30H4D0LFDE-7 Supplier

  • Diodes Incorporated Distributor
  • DMN30H4D0LFDE-7 Price
  • DMN30H4D0LFDE-7 Distributor

DMN30H4D0LFDE-7 Specifications

ManufacturerDiodes Incorporated
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)300V
Current - Continuous Drain (Id) @ 25°C550mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)2.7V, 10V
Rds On (Max) @ Id, Vgs4Ohm @ 300mA, 10V
Vgs(th) (Max) @ Id2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs7.6nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds187.3pF @ 25V
FET Feature-
Power Dissipation (Max)630mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageU-DFN2020-6 (Type E)
Package / Case6-UDFN Exposed Pad

The Products You May Be Interested In

IRFZ44NSPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

49A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

17.5mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

63nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1470pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.8W (Ta), 94W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

SQJ409EP-T1_GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

Automotive, AEC-Q101, TrenchFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

60A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

7mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

260nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

11000pF @ 25V

FET Feature

-

Power Dissipation (Max)

68W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® SO-8

Package / Case

PowerPAK® SO-8

IRF7702TR

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

12V

Current - Continuous Drain (Id) @ 25°C

8A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

14mOhm @ 8A, 4.5V

Vgs(th) (Max) @ Id

1.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

81nC @ 4.5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

3470pF @ 10V

FET Feature

-

Power Dissipation (Max)

1.5W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-TSSOP

Package / Case

8-TSSOP (0.173", 4.40mm Width)

APT7F100B

Microsemi

Manufacturer

Microsemi Corporation

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

1000V

Current - Continuous Drain (Id) @ 25°C

7A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

2Ohm @ 4A, 10V

Vgs(th) (Max) @ Id

5V @ 500µA

Gate Charge (Qg) (Max) @ Vgs

58nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1800pF @ 25V

FET Feature

-

Power Dissipation (Max)

290W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247 [B]

Package / Case

TO-247-3

IRF9Z14STRR

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

6.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

500mOhm @ 4A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

12nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

270pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.7W (Ta), 43W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Recently Sold

REF192GS

REF192GS

Analog Devices

IC VREF SERIES 2.5V 8SOIC

DTC114EETL

DTC114EETL

Rohm Semiconductor

TRANS PREBIAS NPN 150MW EMT3

MAX6675ISA+T

MAX6675ISA+T

Maxim Integrated

IC THERMOCOUP TO DGTL 8-SOIC

MT29F128G08CFABAWP:B

MT29F128G08CFABAWP:B

Micron Technology Inc.

IC FLASH 128G PARALLEL 48TSOP

CM1624-08DE

CM1624-08DE

ON Semiconductor

FILTER RLC 40 OHM/12PF/20NH SMD

LT1120ACS8#PBF

LT1120ACS8#PBF

Linear Technology/Analog Devices

IC REG LIN POS ADJ 125MA 8SOIC

LTST-S310F2KT

LTST-S310F2KT

Lite-On Inc.

LED RGB CLEAR SMD R/A

CK45-R3AD222K-NRA

CK45-R3AD222K-NRA

TDK

CAP CER 2200PF 1KV RADIAL

FDV302P

FDV302P

ON Semiconductor

MOSFET P-CH 25V 120MA SOT-23

1N4148W-7-F

1N4148W-7-F

Diodes Incorporated

DIODE GEN PURP 100V 300MA SOD123

LM339M

LM339M

ON Semiconductor

IC COMPARATOR QUAD 14-SOP

MMBT2369LT1G

MMBT2369LT1G

ON Semiconductor

TRANS NPN 15V 0.2A SOT23