Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

DMN31D5UFZ-7B

DMN31D5UFZ-7B

For Reference Only

Part Number DMN31D5UFZ-7B
PNEDA Part # DMN31D5UFZ-7B
Description MOSFET N-CH 30V .22A X2-DFN0606-
Manufacturer Diodes Incorporated
Unit Price Request a Quote
In Stock 214,716
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 21 - May 26 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

DMN31D5UFZ-7B Resources

Brand Diodes Incorporated
ECAD Module ECAD
Mfr. Part NumberDMN31D5UFZ-7B
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
DMN31D5UFZ-7B, DMN31D5UFZ-7B Datasheet (Total Pages: 6, Size: 349.84 KB)
PDFDMN31D5UFZ-7B Datasheet Cover
DMN31D5UFZ-7B Datasheet Page 2 DMN31D5UFZ-7B Datasheet Page 3 DMN31D5UFZ-7B Datasheet Page 4 DMN31D5UFZ-7B Datasheet Page 5 DMN31D5UFZ-7B Datasheet Page 6

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • DMN31D5UFZ-7B Datasheet
  • where to find DMN31D5UFZ-7B
  • Diodes Incorporated

  • Diodes Incorporated DMN31D5UFZ-7B
  • DMN31D5UFZ-7B PDF Datasheet
  • DMN31D5UFZ-7B Stock

  • DMN31D5UFZ-7B Pinout
  • Datasheet DMN31D5UFZ-7B
  • DMN31D5UFZ-7B Supplier

  • Diodes Incorporated Distributor
  • DMN31D5UFZ-7B Price
  • DMN31D5UFZ-7B Distributor

DMN31D5UFZ-7B Specifications

ManufacturerDiodes Incorporated
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C220mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.2V, 4.5V
Rds On (Max) @ Id, Vgs1.5Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs0.35nC @ 4.5V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds22.2pF @ 15V
FET Feature-
Power Dissipation (Max)393mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageX2-DFN0606-3
Package / Case3-XFDFN

The Products You May Be Interested In

2SK2731T146

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

200mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4V, 10V

Rds On (Max) @ Id, Vgs

2.8Ohm @ 100mA, 10V

Vgs(th) (Max) @ Id

2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

25pF @ 10V

FET Feature

-

Power Dissipation (Max)

200mW (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SMT3

Package / Case

TO-236-3, SC-59, SOT-23-3

RS1E350GNTB

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

35A (Ta), 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

1.7mOhm @ 35A, 10V

Vgs(th) (Max) @ Id

2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

68nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4060pF @ 15V

FET Feature

-

Power Dissipation (Max)

3W (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-HSOP

Package / Case

8-PowerTDFN

NTD6414AN-1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

32A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

37mOhm @ 32A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

40nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1450pF @ 25V

FET Feature

-

Power Dissipation (Max)

100W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

I-PAK

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA

DMTH8012LK3Q-13

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

Automotive, AEC-Q101

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

80V

Current - Continuous Drain (Id) @ 25°C

50A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

16mOhm @ 12A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

46.8nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2051pF @ 40V

FET Feature

-

Power Dissipation (Max)

2.6W (Ta)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-252, (D-Pak)

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

IXFH30N40Q

IXYS

Manufacturer

IXYS

Series

HiPerFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

400V

Current - Continuous Drain (Id) @ 25°C

30A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

160mOhm @ 15A, 10V

Vgs(th) (Max) @ Id

4V @ 4mA

Gate Charge (Qg) (Max) @ Vgs

95nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3300pF @ 25V

FET Feature

-

Power Dissipation (Max)

300W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247AD (IXFH)

Package / Case

TO-247-3

Recently Sold

PIC12F1840-I/SN

PIC12F1840-I/SN

Microchip Technology

IC MCU 8BIT 7KB FLASH 8SOIC

ADR421ARZ

ADR421ARZ

Analog Devices

IC VREF SERIES 2.5V 8SOIC

IRFU9024NPBF

IRFU9024NPBF

Infineon Technologies

MOSFET P-CH 55V 11A I-PAK

BTS436L2G

BTS436L2G

Infineon Technologies

IC HIGH SIDE PWR SWITCH D2PAK-5

SFH6106-2T

SFH6106-2T

Vishay Semiconductor Opto Division

OPTOISOLATOR 5.3KV TRANS 4-SMD

MCP2515T-I/SO

MCP2515T-I/SO

Microchip Technology

IC CAN CONTROLLER W/SPI 18SOIC

ACPL-C78A-000E

ACPL-C78A-000E

Broadcom

IC OPAMP ISOLATION 1 CIRC 8SSO

CMS16(TE12L,Q,M)

CMS16(TE12L,Q,M)

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 40V 3A MFLAT

LT8610ABHMSE#TRPBF

LT8610ABHMSE#TRPBF

Linear Technology/Analog Devices

IC REG BUCK ADJ 3.5A 16MSOP

4608X-101-332LF

4608X-101-332LF

Bourns

RES ARRAY 7 RES 3.3K OHM 8SIP

ST10F276Z5T3

ST10F276Z5T3

STMicroelectronics

IC MCU 16BIT 832KB FLASH 144LQFP

MAX8216ESD+

MAX8216ESD+

Maxim Integrated

IC MONITOR VOLT MPU 14-SOIC