Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

DMN3200U-7

DMN3200U-7

For Reference Only

Part Number DMN3200U-7
PNEDA Part # DMN3200U-7
Description MOSFET N-CH 30V 2.2A SOT23-3
Manufacturer Diodes Incorporated
Unit Price Request a Quote
In Stock 25,164
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 16 - Jun 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

DMN3200U-7 Resources

Brand Diodes Incorporated
ECAD Module ECAD
Mfr. Part NumberDMN3200U-7
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
DMN3200U-7, DMN3200U-7 Datasheet (Total Pages: 6, Size: 279.29 KB)
PDFDMN3200U-7 Datasheet Cover
DMN3200U-7 Datasheet Page 2 DMN3200U-7 Datasheet Page 3 DMN3200U-7 Datasheet Page 4 DMN3200U-7 Datasheet Page 5 DMN3200U-7 Datasheet Page 6

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • DMN3200U-7 Datasheet
  • where to find DMN3200U-7
  • Diodes Incorporated

  • Diodes Incorporated DMN3200U-7
  • DMN3200U-7 PDF Datasheet
  • DMN3200U-7 Stock

  • DMN3200U-7 Pinout
  • Datasheet DMN3200U-7
  • DMN3200U-7 Supplier

  • Diodes Incorporated Distributor
  • DMN3200U-7 Price
  • DMN3200U-7 Distributor

DMN3200U-7 Specifications

ManufacturerDiodes Incorporated
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C2.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4.5V
Rds On (Max) @ Id, Vgs90mOhm @ 2.2A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds290pF @ 10V
FET Feature-
Power Dissipation (Max)650mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-23-3
Package / CaseTO-236-3, SC-59, SOT-23-3

The Products You May Be Interested In

AOT298L

Alpha & Omega Semiconductor

Manufacturer

Alpha & Omega Semiconductor Inc.

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

9A (Ta), 58A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

14.5mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

4.1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

27nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1670pF @ 50V

FET Feature

-

Power Dissipation (Max)

2.1W (Ta), 100W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220

Package / Case

TO-220-3

DMP6110SSS-13

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

110mOhm @ 4.5A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

19.4nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1030pF @ 30V

FET Feature

-

Power Dissipation (Max)

1.5W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SO

Package / Case

8-SOIC (0.154", 3.90mm Width)

IRL3303STRRPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

38A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

26mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

26nC @ 4.5V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

870pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.8W (Ta), 68W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

APT5SM170S

Microsemi

Manufacturer

Microsemi Corporation

Series

-

FET Type

N-Channel

Technology

SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss)

1700V

Current - Continuous Drain (Id) @ 25°C

4.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

20V

Rds On (Max) @ Id, Vgs

1.2Ohm @ 2A, 20V

Vgs(th) (Max) @ Id

3.2V @ 500µA

Gate Charge (Qg) (Max) @ Vgs

29nC @ 20V

Vgs (Max)

+25V, -10V

Input Capacitance (Ciss) (Max) @ Vds

325pF @ 1000V

FET Feature

-

Power Dissipation (Max)

52W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D3Pak

Package / Case

TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

FQB2N30TM

ON Semiconductor

Manufacturer

ON Semiconductor

Series

QFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

300V

Current - Continuous Drain (Id) @ 25°C

2.1A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

3.7Ohm @ 1.05A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

5nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

130pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.13W (Ta), 40W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D²PAK (TO-263AB)

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Recently Sold

SP3232EET-L

SP3232EET-L

MaxLinear, Inc.

IC TRANSCEIVER FULL 2/2 16SOIC

NR4018T4R7M

NR4018T4R7M

Taiyo Yuden

FIXED IND 4.7UH 1.2A 108 MOHM

AD822AN

AD822AN

Analog Devices

IC OPAMP GP 2 CIRCUIT 8DIP

PIC18F2423-I/SO

PIC18F2423-I/SO

Microchip Technology

IC MCU 8BIT 16KB FLASH 28SOIC

FPF2125

FPF2125

ON Semiconductor

IC LOAD SWITCH ADVANCED SOT23

LT3080EMS8E#PBF

LT3080EMS8E#PBF

Linear Technology/Analog Devices

IC REG LINEAR POS ADJ 1.1A 8MSOP

USB3340-EZK-TR

USB3340-EZK-TR

Microchip Technology

IC TRANSCEIVER 1/1 32QFN

DHRB34C102M2FB

DHRB34C102M2FB

Murata

CAP CER 1000PF 15KV RADIAL

CMS15(TE12L,Q,M)

CMS15(TE12L,Q,M)

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 60V 3A M-FLAT

7M24000020

7M24000020

TXC

CRYSTAL 24MHZ 18PF SMD

HX2019NLT

HX2019NLT

Pulse Electronics Network

XFRMR MAGNT MOD 1PORT POE 10/100

AD820BRZ

AD820BRZ

Analog Devices

IC OPAMP JFET 1 CIRCUIT 8SOIC