Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

DMN33D8LT-7

DMN33D8LT-7

For Reference Only

Part Number DMN33D8LT-7
PNEDA Part # DMN33D8LT-7
Description MOSFET N-CH 30V 0.115A
Manufacturer Diodes Incorporated
Unit Price Request a Quote
In Stock 7,812
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jul 12 - Jul 17 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

DMN33D8LT-7 Resources

Brand Diodes Incorporated
ECAD Module ECAD
Mfr. Part NumberDMN33D8LT-7
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
DMN33D8LT-7, DMN33D8LT-7 Datasheet (Total Pages: 5, Size: 251.35 KB)
PDFDMN33D8LT-7 Datasheet Cover
DMN33D8LT-7 Datasheet Page 2 DMN33D8LT-7 Datasheet Page 3 DMN33D8LT-7 Datasheet Page 4 DMN33D8LT-7 Datasheet Page 5

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • DMN33D8LT-7 Datasheet
  • where to find DMN33D8LT-7
  • Diodes Incorporated

  • Diodes Incorporated DMN33D8LT-7
  • DMN33D8LT-7 PDF Datasheet
  • DMN33D8LT-7 Stock

  • DMN33D8LT-7 Pinout
  • Datasheet DMN33D8LT-7
  • DMN33D8LT-7 Supplier

  • Diodes Incorporated Distributor
  • DMN33D8LT-7 Price
  • DMN33D8LT-7 Distributor

DMN33D8LT-7 Specifications

ManufacturerDiodes Incorporated
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C115mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4V
Rds On (Max) @ Id, Vgs5Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id1.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs0.55nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds48pF @ 5V
FET Feature-
Power Dissipation (Max)240mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-523
Package / CaseSOT-523

The Products You May Be Interested In

NTNS3A91PZT5G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

223mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.5V, 4.5V

Rds On (Max) @ Id, Vgs

1.6Ohm @ 100mA, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

1.1nC @ 4.5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

41pF @ 15V

FET Feature

-

Power Dissipation (Max)

121mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

3-XLLGA (0.62x0.62)

Package / Case

3-XFLGA

SUP10250E-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

ThunderFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

250V

Current - Continuous Drain (Id) @ 25°C

63A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

7.5V, 10V

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

88nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

375W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

STP57N65M5

STMicroelectronics

Manufacturer

STMicroelectronics

Series

MDmesh™ V

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

42A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

63mOhm @ 21A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

98nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

4200pF @ 100V

FET Feature

-

Power Dissipation (Max)

250W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220

Package / Case

TO-220-3

SI7440DP-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

12A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

6.5mOhm @ 21A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

35nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

1.9W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® SO-8

Package / Case

PowerPAK® SO-8

BUZ30A

Infineon Technologies

Manufacturer

Infineon Technologies

Series

SIPMOS®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

21A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

130mOhm @ 13.5A, 10V

Vgs(th) (Max) @ Id

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1900pF @ 25V

FET Feature

-

Power Dissipation (Max)

125W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO220-3-1

Package / Case

TO-220-3

Recently Sold

ECA-2AM470

ECA-2AM470

Panasonic Electronic Components

CAP ALUM 47UF 20% 100V RADIAL

AD8226ARZ-R7

AD8226ARZ-R7

Analog Devices

IC INST AMP 1 CIRCUIT 8SOIC

DR73-1R0-R

DR73-1R0-R

Eaton - Electronics Division

FIXED IND 1UH 5.28A 10.2 MOHM

BD677A

BD677A

STMicroelectronics

TRANS NPN DARL 60V 4A SOT-32

NC7WZ132K8X

NC7WZ132K8X

ON Semiconductor

IC GATE NAND SCHMITT 2CH US8

MC34063ABD

MC34063ABD

STMicroelectronics

IC REG BUCK BST ADJ 1.5A 8SO

74ACTQ245QSC

74ACTQ245QSC

ON Semiconductor

IC TXRX NON-INVERT 5.5V 20QSOP

ADE7754ARZRL

ADE7754ARZRL

Analog Devices

IC ENERGY METERING 3PHASE 24SOIC

HX5008NL

HX5008NL

Pulse Electronics Network

MODULE SINGLE GIGABIT LAN 24SOIC

NM93CS46M8

NM93CS46M8

ON Semiconductor

IC EEPROM 1K SPI 1MHZ 8SO

PDS1040-13

PDS1040-13

Diodes Incorporated

DIODE SCHOTTKY 40V 10A POWERDI5

ADG5421BCPZ-RL7

ADG5421BCPZ-RL7

Analog Devices

IC SWITCH SPST DUAL 10LFCSP