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DMN4800LSSQ-13

DMN4800LSSQ-13

For Reference Only

Part Number DMN4800LSSQ-13
PNEDA Part # DMN4800LSSQ-13
Description MOSFET N-CH 30V 8.6A 8-SO
Manufacturer Diodes Incorporated
Unit Price Request a Quote
In Stock 5,184
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 19 - Jun 24 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

DMN4800LSSQ-13 Resources

Brand Diodes Incorporated
ECAD Module ECAD
Mfr. Part NumberDMN4800LSSQ-13
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
DMN4800LSSQ-13, DMN4800LSSQ-13 Datasheet (Total Pages: 6, Size: 326.08 KB)
PDFDMN4800LSSQ-13 Datasheet Cover
DMN4800LSSQ-13 Datasheet Page 2 DMN4800LSSQ-13 Datasheet Page 3 DMN4800LSSQ-13 Datasheet Page 4 DMN4800LSSQ-13 Datasheet Page 5 DMN4800LSSQ-13 Datasheet Page 6

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DMN4800LSSQ-13 Specifications

ManufacturerDiodes Incorporated
SeriesAutomotive, AEC-Q101
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C8.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs14mOhm @ 9A, 10V
Vgs(th) (Max) @ Id1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs8.7nC @ 5V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds798pF @ 10V
FET Feature-
Power Dissipation (Max)1.46W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SO
Package / Case8-SOIC (0.154", 3.90mm Width)

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