DMN55D0UTQ-7
For Reference Only
| Part Number | DMN55D0UTQ-7 |
| PNEDA Part # | DMN55D0UTQ-7 |
| Description | MOSFET N-CH 50V 160MA SOT-523 |
| Manufacturer | Diodes Incorporated |
| Unit Price | Request a Quote |
| In Stock | 27,348 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 4 - May 9 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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DMN55D0UTQ-7 Resources
| Brand | Diodes Incorporated |
| ECAD Module |
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| Mfr. Part Number | DMN55D0UTQ-7 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
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DMN55D0UTQ-7 Specifications
| Manufacturer | Diodes Incorporated |
| Series | - |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 50V |
| Current - Continuous Drain (Id) @ 25°C | 160mA (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4V |
| Rds On (Max) @ Id, Vgs | 4Ohm @ 100mA, 4V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | - |
| Vgs (Max) | ±12V |
| Input Capacitance (Ciss) (Max) @ Vds | 25pF @ 10V |
| FET Feature | - |
| Power Dissipation (Max) | 200mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-523 |
| Package / Case | SOT-523 |
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Manufacturer Alpha & Omega Semiconductor Inc. Series aMOS5™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 700V Current - Continuous Drain (Id) @ 25°C 5A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 950mOhm @ 1A, 10V Vgs(th) (Max) @ Id 4.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 10nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 461pF @ 100V FET Feature - Power Dissipation (Max) 56.5W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-251A Package / Case TO-251-3 Stub Leads, IPak |
