Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

DMN65D8LFB-7B

DMN65D8LFB-7B

For Reference Only

Part Number DMN65D8LFB-7B
PNEDA Part # DMN65D8LFB-7B
Description MOSFET N-CH 60V 260MA 3DFN
Manufacturer Diodes Incorporated
Unit Price Request a Quote
In Stock 342,042
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 5 - May 10 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

DMN65D8LFB-7B Resources

Brand Diodes Incorporated
ECAD Module ECAD
Mfr. Part NumberDMN65D8LFB-7B
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
DMN65D8LFB-7B, DMN65D8LFB-7B Datasheet (Total Pages: 6, Size: 257.58 KB)
PDFDMN65D8LFB-7 Datasheet Cover
DMN65D8LFB-7 Datasheet Page 2 DMN65D8LFB-7 Datasheet Page 3 DMN65D8LFB-7 Datasheet Page 4 DMN65D8LFB-7 Datasheet Page 5 DMN65D8LFB-7 Datasheet Page 6

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • DMN65D8LFB-7B Datasheet
  • where to find DMN65D8LFB-7B
  • Diodes Incorporated

  • Diodes Incorporated DMN65D8LFB-7B
  • DMN65D8LFB-7B PDF Datasheet
  • DMN65D8LFB-7B Stock

  • DMN65D8LFB-7B Pinout
  • Datasheet DMN65D8LFB-7B
  • DMN65D8LFB-7B Supplier

  • Diodes Incorporated Distributor
  • DMN65D8LFB-7B Price
  • DMN65D8LFB-7B Distributor

DMN65D8LFB-7B Specifications

ManufacturerDiodes Incorporated
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C260mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Rds On (Max) @ Id, Vgs3Ohm @ 115mA, 10V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds25pF @ 25V
FET Feature-
Power Dissipation (Max)430mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageX1-DFN1006-3
Package / Case3-UFDFN

The Products You May Be Interested In

RSS110N03FU6TB

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

11A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4V, 10V

Rds On (Max) @ Id, Vgs

10.7mOhm @ 11A, 10V

Vgs(th) (Max) @ Id

2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

17nC @ 5V

Vgs (Max)

20V

Input Capacitance (Ciss) (Max) @ Vds

1300pF @ 10V

FET Feature

-

Power Dissipation (Max)

2W (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SOP

Package / Case

8-SOIC (0.154", 3.90mm Width)

HUFA75842S3ST

ON Semiconductor

Manufacturer

ON Semiconductor

Series

UltraFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

150V

Current - Continuous Drain (Id) @ 25°C

43A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

42mOhm @ 43A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

175nC @ 20V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2730pF @ 25V

FET Feature

-

Power Dissipation (Max)

230W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D²PAK (TO-263AB)

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

IXFP3N120

IXYS

Manufacturer

IXYS

Series

HiPerFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

1200V

Current - Continuous Drain (Id) @ 25°C

3A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

4.5Ohm @ 500mA, 10V

Vgs(th) (Max) @ Id

5V @ 1.5mA

Gate Charge (Qg) (Max) @ Vgs

39nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1050pF @ 25V

FET Feature

-

Power Dissipation (Max)

200W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

IRF6810STR1PBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

25V

Current - Continuous Drain (Id) @ 25°C

16A (Ta), 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

5.2mOhm @ 16A, 10V

Vgs(th) (Max) @ Id

2.1V @ 25µA

Gate Charge (Qg) (Max) @ Vgs

11nC @ 4.5V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

1038pF @ 13V

FET Feature

-

Power Dissipation (Max)

2.1W (Ta), 20W (Tc)

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DIRECTFET S1

Package / Case

DirectFET™ Isometric S1

AON4703

Alpha & Omega Semiconductor

Manufacturer

Alpha & Omega Semiconductor Inc.

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

3.4A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

90mOhm @ 3.4A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

6.1nC @ 4.5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

540pF @ 10V

FET Feature

Schottky Diode (Isolated)

Power Dissipation (Max)

1.7W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-DFN (3x2)

Package / Case

8-SMD, Flat Lead

Recently Sold

0CNL200.V

0CNL200.V

Littelfuse

FUSE STRIP 200A 32VAC/VDC BOLT

7447709680

7447709680

Wurth Electronics

FIXED IND 68UH 3.2A 89 MOHM SMD

BYG10D-E3/TR

BYG10D-E3/TR

Vishay Semiconductor Diodes Division

DIODE AVALANCHE 200V 1.5A

MC14099BDWR2G

MC14099BDWR2G

ON Semiconductor

IC LATCH 8BIT ADDRESS 16-SOIC

2873000202

2873000202

Fair-Rite Products

FERRITE CORE MULTI-APERTURE

NHD-0420CW-AW3

NHD-0420CW-AW3

Newhaven Display Intl

4X20 WHITE SLIM CHARACTER OLED

LTST-C150CKT

LTST-C150CKT

Lite-On Inc.

LED RED CLEAR 1206 SMD

L7905CV-DG

L7905CV-DG

STMicroelectronics

IC REG LINEAR -5V 1.5A TO220

LFXP2-17E-6FTN256I

LFXP2-17E-6FTN256I

Lattice Semiconductor Corporation

IC FPGA 201 I/O 256FTBGA

HCPL-181-060E

HCPL-181-060E

Broadcom

OPTOISO 3.75KV TRANS 4MINIFLAT

S25FL064P0XMFI001

S25FL064P0XMFI001

Cypress Semiconductor

IC FLASH 64M SPI 104MHZ 16SOIC

GQM1555C2D3R3CB01D

GQM1555C2D3R3CB01D

Murata

CAP CER 3.3PF 200V NP0 0402