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DMN80H2D0SCTI

DMN80H2D0SCTI

For Reference Only

Part Number DMN80H2D0SCTI
PNEDA Part # DMN80H2D0SCTI
Description MOSFET N-CH 800V 7A ITO220AB
Manufacturer Diodes Incorporated
Unit Price Request a Quote
In Stock 3,384
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 24 - May 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

DMN80H2D0SCTI Resources

Brand Diodes Incorporated
ECAD Module ECAD
Mfr. Part NumberDMN80H2D0SCTI
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
DMN80H2D0SCTI, DMN80H2D0SCTI Datasheet (Total Pages: 7, Size: 393.8 KB)
PDFDMN80H2D0SCTI Datasheet Cover
DMN80H2D0SCTI Datasheet Page 2 DMN80H2D0SCTI Datasheet Page 3 DMN80H2D0SCTI Datasheet Page 4 DMN80H2D0SCTI Datasheet Page 5 DMN80H2D0SCTI Datasheet Page 6 DMN80H2D0SCTI Datasheet Page 7

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DMN80H2D0SCTI Specifications

ManufacturerDiodes Incorporated
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25°C7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs2Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs35.4nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1253pF @ 25V
FET Feature-
Power Dissipation (Max)41W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageITO-220AB
Package / CaseTO-220-3 Full Pack, Isolated Tab

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