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DMNH10H028SCT

DMNH10H028SCT

For Reference Only

Part Number DMNH10H028SCT
PNEDA Part # DMNH10H028SCT
Description MOSFET BVDSS: 61V 100V,TO220-3,T
Manufacturer Diodes Incorporated
Unit Price Request a Quote
In Stock 6,300
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 17 - May 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

DMNH10H028SCT Resources

Brand Diodes Incorporated
ECAD Module ECAD
Mfr. Part NumberDMNH10H028SCT
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
DMNH10H028SCT, DMNH10H028SCT Datasheet (Total Pages: 7, Size: 396.31 KB)
PDFDMNH10H028SCT Datasheet Cover
DMNH10H028SCT Datasheet Page 2 DMNH10H028SCT Datasheet Page 3 DMNH10H028SCT Datasheet Page 4 DMNH10H028SCT Datasheet Page 5 DMNH10H028SCT Datasheet Page 6 DMNH10H028SCT Datasheet Page 7

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DMNH10H028SCT Specifications

ManufacturerDiodes Incorporated
SeriesAutomotive, AEC-Q101
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs28mOhm @ 20A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs31.9nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1942pF @ 50V
FET Feature-
Power Dissipation (Max)2.8W (Ta)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

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