DMNH10H028SK3-13
For Reference Only
| Part Number | DMNH10H028SK3-13 |
| PNEDA Part # | DMNH10H028SK3-13 |
| Description | MOSFET N-CH 100V 55A TO252 |
| Manufacturer | Diodes Incorporated |
| Unit Price | Request a Quote |
| In Stock | 3,492 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 12 - Jun 17 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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DMNH10H028SK3-13 Resources
| Brand | Diodes Incorporated |
| ECAD Module |
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| Mfr. Part Number | DMNH10H028SK3-13 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
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DMNH10H028SK3-13 Specifications
| Manufacturer | Diodes Incorporated |
| Series | - |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 55A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 28mOhm @ 20A, 10V |
| Vgs(th) (Max) @ Id | 3.3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 36nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 2245pF @ 50V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-252, (D-Pak) |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Manufacturer Infineon Technologies Series SIPMOS® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 18.6A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 130mOhm @ 13.2A, 10V Vgs(th) (Max) @ Id 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs 33nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 860pF @ 25V FET Feature - Power Dissipation (Max) 80W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-TO252-3 Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Manufacturer ON Semiconductor Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 19A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 59mOhm @ 9.5A, 10V Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 590pF @ 20V FET Feature - Power Dissipation (Max) 1W (Ta), 23W (Tc) Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package TP Package / Case TO-251-3 Short Leads, IPak, TO-251AA |
