Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

DMNH3010LK3-13

DMNH3010LK3-13

For Reference Only

Part Number DMNH3010LK3-13
PNEDA Part # DMNH3010LK3-13
Description MOSFET NCH 30V 15A TO252
Manufacturer Diodes Incorporated
Unit Price Request a Quote
In Stock 4,662
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 16 - May 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

DMNH3010LK3-13 Resources

Brand Diodes Incorporated
ECAD Module ECAD
Mfr. Part NumberDMNH3010LK3-13
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
DMNH3010LK3-13, DMNH3010LK3-13 Datasheet (Total Pages: 7, Size: 530.54 KB)
PDFDMNH3010LK3-13 Datasheet Cover
DMNH3010LK3-13 Datasheet Page 2 DMNH3010LK3-13 Datasheet Page 3 DMNH3010LK3-13 Datasheet Page 4 DMNH3010LK3-13 Datasheet Page 5 DMNH3010LK3-13 Datasheet Page 6 DMNH3010LK3-13 Datasheet Page 7

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • DMNH3010LK3-13 Datasheet
  • where to find DMNH3010LK3-13
  • Diodes Incorporated

  • Diodes Incorporated DMNH3010LK3-13
  • DMNH3010LK3-13 PDF Datasheet
  • DMNH3010LK3-13 Stock

  • DMNH3010LK3-13 Pinout
  • Datasheet DMNH3010LK3-13
  • DMNH3010LK3-13 Supplier

  • Diodes Incorporated Distributor
  • DMNH3010LK3-13 Price
  • DMNH3010LK3-13 Distributor

DMNH3010LK3-13 Specifications

ManufacturerDiodes Incorporated
SeriesAutomotive, AEC-Q101
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C15A (Ta), 55A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs9.5mOhm @ 18A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs37nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2075pF @ 15V
FET Feature-
Power Dissipation (Max)2W (Ta)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252-4L
Package / CaseTO-252-5, DPak (4 Leads + Tab), TO-252AD

The Products You May Be Interested In

Manufacturer

IXYS

Series

GigaMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

250V

Current - Continuous Drain (Id) @ 25°C

180A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

12.9mOhm @ 60A, 10V

Vgs(th) (Max) @ Id

5V @ 8mA

Gate Charge (Qg) (Max) @ Vgs

345nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

28000pF @ 25V

FET Feature

-

Power Dissipation (Max)

1390W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-264AA (IXFK)

Package / Case

TO-264-3, TO-264AA

STP40NS15

STMicroelectronics

Manufacturer

STMicroelectronics

Series

MESH OVERLAY™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

150V

Current - Continuous Drain (Id) @ 25°C

40A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

52mOhm @ 40A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

110nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2400pF @ 25V

FET Feature

-

Power Dissipation (Max)

140W (Tc)

Operating Temperature

175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

SI7716ADN-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

16A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

13.5mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

23nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

846pF @ 15V

FET Feature

-

Power Dissipation (Max)

3.5W (Ta), 27.7W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® 1212-8

Package / Case

PowerPAK® 1212-8

NTP75N03-6G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

75A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

6.5mOhm @ 37.5A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

75nC @ 5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

5635pF @ 25V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta), 125W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

SI4431BDY-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

5.7A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

30mOhm @ 7.5A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

20nC @ 5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

1.5W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SO

Package / Case

8-SOIC (0.154", 3.90mm Width)

Recently Sold

8121-RC

8121-RC

Bourns

COMMON MODE CHOKE 1MH 20A 2LN TH

DG212BDY

DG212BDY

Vishay Siliconix

IC SWITCH QUAD SPST 16SOIC

S3A-13-F

S3A-13-F

Diodes Incorporated

DIODE GEN PURP 50V 3A SMC

WM8962ECSN/R

WM8962ECSN/R

Cirrus Logic Inc.

IC CODEC STER 49WCSP

742792096

742792096

Wurth Electronics

FERRITE BEAD 1 KOHM 0805 1LN

T520B127M006ATE035

T520B127M006ATE035

KEMET

CAP TANT POLY 120UF 6.3V 3528

MC14071BD

MC14071BD

ON Semiconductor

IC GATE OR 4CH 2-INP 14SOIC

LTC2802IDE#TRPBF

LTC2802IDE#TRPBF

Linear Technology/Analog Devices

IC TRANSCEIVER HALF 1/1 12DFN

MC14040BDR2G

MC14040BDR2G

ON Semiconductor

IC COUNTER 12BIT CMOS 16SOIC

LPC1788FBD208,551

LPC1788FBD208,551

NXP

IC MCU 32BIT 512KB FLASH 208LQFP

LTC6655BHMS8-1.25#TRPBF

LTC6655BHMS8-1.25#TRPBF

Linear Technology/Analog Devices

IC VREF SERIES 1.25V 8MSOP

DEA1X3D470JN2A

DEA1X3D470JN2A

Murata

CAP CER 47PF 2KV SL RADIAL