Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

DMNH6011LK3Q-13

DMNH6011LK3Q-13

For Reference Only

Part Number DMNH6011LK3Q-13
PNEDA Part # DMNH6011LK3Q-13
Description MOSFET BVDSS: 41V-60V TO252 T&R
Manufacturer Diodes Incorporated
Unit Price Request a Quote
In Stock 7,578
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 15 - May 20 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

DMNH6011LK3Q-13 Resources

Brand Diodes Incorporated
ECAD Module ECAD
Mfr. Part NumberDMNH6011LK3Q-13
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • DMNH6011LK3Q-13 Datasheet
  • where to find DMNH6011LK3Q-13
  • Diodes Incorporated

  • Diodes Incorporated DMNH6011LK3Q-13
  • DMNH6011LK3Q-13 PDF Datasheet
  • DMNH6011LK3Q-13 Stock

  • DMNH6011LK3Q-13 Pinout
  • Datasheet DMNH6011LK3Q-13
  • DMNH6011LK3Q-13 Supplier

  • Diodes Incorporated Distributor
  • DMNH6011LK3Q-13 Price
  • DMNH6011LK3Q-13 Distributor

DMNH6011LK3Q-13 Specifications

ManufacturerDiodes Incorporated
SeriesAutomotive, AEC-Q101
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs12mOhm @ 25A, 10V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs49.1nC @ 10V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds3077pF @ 30V
FET Feature-
Power Dissipation (Max)1.6W (Ta)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252, (D-Pak)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

The Products You May Be Interested In

FDWS86368-F085

ON Semiconductor

Manufacturer

ON Semiconductor

Series

Automotive, AEC-Q101, PowerTrench®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

80V

Current - Continuous Drain (Id) @ 25°C

80A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

4.5mOhm @ 80A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

75nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4350pF @ 40V

FET Feature

-

Power Dissipation (Max)

214W (Tj)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

Power56

Package / Case

8-PowerTDFN

DMP2023UFDF-7

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

7.6A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.5V, 4.5V

Rds On (Max) @ Id, Vgs

27mOhm @ 7A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

27nC @ 4.5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

1837pF @ 15V

FET Feature

-

Power Dissipation (Max)

730mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

U-DFN2020-6 (Type F)

Package / Case

6-UDFN Exposed Pad

SI4178DY-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

12A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

21mOhm @ 8.4A, 10V

Vgs(th) (Max) @ Id

2.8V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

12nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

405pF @ 15V

FET Feature

-

Power Dissipation (Max)

2.4W (Ta), 5W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SO

Package / Case

8-SOIC (0.154", 3.90mm Width)

DMNH4005SPSQ-13

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

80A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

4mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

48nC @ 10V

Vgs (Max)

20V

Input Capacitance (Ciss) (Max) @ Vds

2847pF @ 20V

FET Feature

-

Power Dissipation (Max)

2.8W

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerDI5060-8

Package / Case

8-PowerTDFN

GP2M008A060FG

Global Power Technologies Group

Manufacturer

Global Power Technologies Group

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

7.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.2Ohm @ 3.75A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

23nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1063pF @ 25V

FET Feature

-

Power Dissipation (Max)

39W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220F

Package / Case

TO-220-3 Full Pack

Recently Sold

FHAC0001ZXJ

FHAC0001ZXJ

Littelfuse

FUSE HLDR BLADE 32V 20A IN LINE

EPCQ64ASI16N

EPCQ64ASI16N

Intel

IC CONFIG DEVICE 64MBIT 16SOIC

AD8044ARZ-14

AD8044ARZ-14

Analog Devices

IC OPAMP VFB 4 CIRCUIT 14SOIC

MC74HC00AD

MC74HC00AD

ON Semiconductor

IC GATE NAND 4CH 2-INP 14SOIC

S1M-13-F

S1M-13-F

Diodes Incorporated

DIODE GEN PURP 1KV 1A SMA

GD25Q80CSIG

GD25Q80CSIG

GigaDevice Semiconductor (HK) Limited

NOR FLASH

S5BC-13-F

S5BC-13-F

Diodes Incorporated

DIODE GEN PURP 100V 5A SMC

MBR0580-TP

MBR0580-TP

Micro Commercial Co

DIODE SCHOTTKY 80V 500MA SOD123

IS43TR16128D-125KBLI

IS43TR16128D-125KBLI

ISSI, Integrated Silicon Solution Inc

2G 1.5V DDR3 128MX16 1600MT 96 B

CDRH127/LDNP-220MC

CDRH127/LDNP-220MC

Sumida

FIXED IND 22UH 4.7A 36.4 MOHM

CD40106BCN

CD40106BCN

ON Semiconductor

IC INVERTER SCHMITT 6CH 14DIP

WSL2512R0250FEA

WSL2512R0250FEA

Vishay Dale

RES 0.025 OHM 1% 1W 2512