Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

DMP2008UFG-13

DMP2008UFG-13

For Reference Only

Part Number DMP2008UFG-13
PNEDA Part # DMP2008UFG-13
Description MOSFET P-CH 20V 14A POWERDI
Manufacturer Diodes Incorporated
Unit Price Request a Quote
In Stock 56,868
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 14 - May 19 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

DMP2008UFG-13 Resources

Brand Diodes Incorporated
ECAD Module ECAD
Mfr. Part NumberDMP2008UFG-13
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
DMP2008UFG-13, DMP2008UFG-13 Datasheet (Total Pages: 6, Size: 255.18 KB)
PDFDMP2008UFG-13 Datasheet Cover
DMP2008UFG-13 Datasheet Page 2 DMP2008UFG-13 Datasheet Page 3 DMP2008UFG-13 Datasheet Page 4 DMP2008UFG-13 Datasheet Page 5 DMP2008UFG-13 Datasheet Page 6

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • DMP2008UFG-13 Datasheet
  • where to find DMP2008UFG-13
  • Diodes Incorporated

  • Diodes Incorporated DMP2008UFG-13
  • DMP2008UFG-13 PDF Datasheet
  • DMP2008UFG-13 Stock

  • DMP2008UFG-13 Pinout
  • Datasheet DMP2008UFG-13
  • DMP2008UFG-13 Supplier

  • Diodes Incorporated Distributor
  • DMP2008UFG-13 Price
  • DMP2008UFG-13 Distributor

DMP2008UFG-13 Specifications

ManufacturerDiodes Incorporated
Series-
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C14A (Ta), 54A (Tc)
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4.5V
Rds On (Max) @ Id, Vgs8mOhm @ 12A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs72nC @ 4.5V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds6909pF @ 10V
FET Feature-
Power Dissipation (Max)2.4W (Ta), 41W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerDI3333-8
Package / Case8-PowerVDFN

The Products You May Be Interested In

BSC884N03MS G

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

34V

Current - Continuous Drain (Id) @ 25°C

17A (Ta), 85A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

4.5mOhm @ 30A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

34nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2700pF @ 15V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta), 50W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TDSON-8-1

Package / Case

8-PowerTDFN

R6004JND3TL1

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

4A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

15V

Rds On (Max) @ Id, Vgs

1.43Ohm @ 2A, 15V

Vgs(th) (Max) @ Id

7V @ 450µA

Gate Charge (Qg) (Max) @ Vgs

10.5nC @ 15V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

260pF @ 100V

FET Feature

-

Power Dissipation (Max)

60W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-252

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

DMN6069SE-13

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

Automotive, AEC-Q101

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

4.3A (Ta), 10A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

69mOhm @ 3A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

16nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

825pF @ 30V

FET Feature

-

Power Dissipation (Max)

2.2W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-223

Package / Case

TO-261-4, TO-261AA

IRFL9110TR

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

1.1A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.2Ohm @ 660mA, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

8.7nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

200pF @ 25V

FET Feature

-

Power Dissipation (Max)

2W (Ta), 3.1W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-223

Package / Case

TO-261-4, TO-261AA

BUK9520-100B,127

Nexperia

Manufacturer

Nexperia USA Inc.

Series

TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

63A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

18.5mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

53.4nC @ 5V

Vgs (Max)

±15V

Input Capacitance (Ciss) (Max) @ Vds

5657pF @ 25V

FET Feature

-

Power Dissipation (Max)

203W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

Recently Sold

0154007.DR

0154007.DR

Littelfuse

FUSE BRD MNT 7A 125VAC/VDC 2SMD

TZR1R080A001R00

TZR1R080A001R00

Murata

CAP TRIMMER 3-8PF 25V SMD

PEX8734-AB80BI G

PEX8734-AB80BI G

Broadcom

PEX8734-AB80BI G

PI6C49X0204CWIE

PI6C49X0204CWIE

Diodes Incorporated

IC CLOCK BUFFER 1:4 200MHZ 8SOIC

TNY290PG

TNY290PG

Power Integrations

IC OFF-LINE SWITCH PWM 8DIP

ZTB800J

ZTB800J

ECS

CER RES 800.0000KHZ T/H

MAX15006AATT/V+T

MAX15006AATT/V+T

Maxim Integrated

IC REG LINEAR 3.3V 50MA 6TDFN

MAX7360ETL+

MAX7360ETL+

Maxim Integrated

IC CTRLR KEY-SW I2C 40TQFN

ADN4662BRZ

ADN4662BRZ

Analog Devices

IC RECEIVER 0/1 8SOIC

MT41J128M16JT-093:K

MT41J128M16JT-093:K

Micron Technology Inc.

IC DRAM 2G PARALLEL 96FBGA

G5LE-14 DC12

G5LE-14 DC12

Omron Electronics Inc-EMC Div

RELAY GEN PURPOSE SPDT 10A 12V

LT1963AEFE-3.3#TRPBF

LT1963AEFE-3.3#TRPBF

Linear Technology/Analog Devices

IC REG LINEAR 3.3V 1.5A 16TSSOP