DMS3012SFG-13
For Reference Only
| Part Number | DMS3012SFG-13 |
| PNEDA Part # | DMS3012SFG-13 |
| Description | MOSFET N-CH 30V 12A POWERDI |
| Manufacturer | Diodes Incorporated |
| Unit Price | Request a Quote |
| In Stock | 3,222 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 13 - Jun 18 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
DMS3012SFG-13 Resources
| Brand | Diodes Incorporated |
| ECAD Module |
|
| Mfr. Part Number | DMS3012SFG-13 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- DMS3012SFG-13 Datasheet
- where to find DMS3012SFG-13
- Diodes Incorporated
- Diodes Incorporated DMS3012SFG-13
- DMS3012SFG-13 PDF Datasheet
- DMS3012SFG-13 Stock
- DMS3012SFG-13 Pinout
- Datasheet DMS3012SFG-13
- DMS3012SFG-13 Supplier
- Diodes Incorporated Distributor
- DMS3012SFG-13 Price
- DMS3012SFG-13 Distributor
DMS3012SFG-13 Specifications
| Manufacturer | Diodes Incorporated |
| Series | - |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 13.5A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 14.7nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 4310pF @ 15V |
| FET Feature | Schottky Diode (Body) |
| Power Dissipation (Max) | 890mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerDI3333-8 |
| Package / Case | 8-PowerVDFN |
The Products You May Be Interested In
|
Manufacturer Toshiba Semiconductor and Storage Series U-MOSIX-H FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 100A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 4.4mOhm @ 30A, 4.5V Vgs(th) (Max) @ Id 2.5V @ 500µA Gate Charge (Qg) (Max) @ Vgs 60nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 5435pF @ 30V FET Feature - Power Dissipation (Max) 132W (Tc) Operating Temperature 175°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SOP Advance (5x5) Package / Case 8-PowerVDFN |
Manufacturer Nexperia USA Inc. Series Automotive, AEC-Q101, TrenchMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 100A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 2.6mOhm @ 25A, 10V Vgs(th) (Max) @ Id 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs 91nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 7130pF @ 25V FET Feature - Power Dissipation (Max) 263W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D2PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 55A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4V, 10V Rds On (Max) @ Id, Vgs 26mOhm @ 29A, 10V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 140nC @ 5V Vgs (Max) ±16V Input Capacitance (Ciss) (Max) @ Vds 3700pF @ 25V FET Feature - Power Dissipation (Max) 200W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3 |
Manufacturer Vishay Siliconix Series Automotive, AEC-Q101, TrenchFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 97A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 6.3mOhm @ 25A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 125nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 6060pF @ 25V FET Feature - Power Dissipation (Max) 136W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-252AA Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
Manufacturer Alpha & Omega Semiconductor Inc. Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 6A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 45mOhm @ 6A, 10V Vgs(th) (Max) @ Id 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 16nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 495pF @ 15V FET Feature - Power Dissipation (Max) 2.5W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SOIC Package / Case 8-SOIC (0.154", 3.90mm Width) |
