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DMT10H015LFG-7

DMT10H015LFG-7

For Reference Only

Part Number DMT10H015LFG-7
PNEDA Part # DMT10H015LFG-7
Description MOSFET N-CH 100V 10A
Manufacturer Diodes Incorporated
Unit Price Request a Quote
In Stock 7,074
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 13 - Jun 18 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

DMT10H015LFG-7 Resources

Brand Diodes Incorporated
ECAD Module ECAD
Mfr. Part NumberDMT10H015LFG-7
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
DMT10H015LFG-7, DMT10H015LFG-7 Datasheet (Total Pages: 7, Size: 529.54 KB)
PDFDMT10H015LFG-13 Datasheet Cover
DMT10H015LFG-13 Datasheet Page 2 DMT10H015LFG-13 Datasheet Page 3 DMT10H015LFG-13 Datasheet Page 4 DMT10H015LFG-13 Datasheet Page 5 DMT10H015LFG-13 Datasheet Page 6 DMT10H015LFG-13 Datasheet Page 7

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DMT10H015LFG-7 Specifications

ManufacturerDiodes Incorporated
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C10A (Ta), 42A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs13.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs33.3nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1871pF @ 50V
FET Feature-
Power Dissipation (Max)2W (Ta), 35W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerDI3333-8
Package / Case8-PowerVDFN

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