DMTH10H010SCT
For Reference Only
| Part Number | DMTH10H010SCT |
| PNEDA Part # | DMTH10H010SCT |
| Description | MOSFET BVDSS: 61V-100V TO220AB T |
| Manufacturer | Diodes Incorporated |
| Unit Price | Request a Quote |
| In Stock | 8,478 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 6 - May 11 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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DMTH10H010SCT Resources
| Brand | Diodes Incorporated |
| ECAD Module |
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| Mfr. Part Number | DMTH10H010SCT |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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Logistics Mode
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DMTH10H010SCT Specifications
| Manufacturer | Diodes Incorporated |
| Series | - |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 100A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 9.5mOhm @ 13A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 56.4nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 4468pF @ 50V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 187W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
| Package / Case | TO-220-3 |
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