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DMTH10H010SPSQ-13

DMTH10H010SPSQ-13

For Reference Only

Part Number DMTH10H010SPSQ-13
PNEDA Part # DMTH10H010SPSQ-13
Description MOSFET N-CHAN 61V 100V POWERDI50
Manufacturer Diodes Incorporated
Unit Price Request a Quote
In Stock 7,524
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 15 - May 20 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

DMTH10H010SPSQ-13 Resources

Brand Diodes Incorporated
ECAD Module ECAD
Mfr. Part NumberDMTH10H010SPSQ-13
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
DMTH10H010SPSQ-13, DMTH10H010SPSQ-13 Datasheet (Total Pages: 7, Size: 450.03 KB)
PDFDMTH10H010SPSQ-13 Datasheet Cover
DMTH10H010SPSQ-13 Datasheet Page 2 DMTH10H010SPSQ-13 Datasheet Page 3 DMTH10H010SPSQ-13 Datasheet Page 4 DMTH10H010SPSQ-13 Datasheet Page 5 DMTH10H010SPSQ-13 Datasheet Page 6 DMTH10H010SPSQ-13 Datasheet Page 7

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DMTH10H010SPSQ-13 Specifications

ManufacturerDiodes Incorporated
SeriesAutomotive, AEC-Q101
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C11.8A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs8.8mOhm @ 13A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs56.4nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds4468pF @ 50V
FET Feature-
Power Dissipation (Max)1.5W (Ta), 166W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerDI5060-8
Package / Case8-PowerTDFN

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