DMTH10H015SPSQ-13
For Reference Only
| Part Number | DMTH10H015SPSQ-13 |
| PNEDA Part # | DMTH10H015SPSQ-13 |
| Description | MOSFET BVDSS: 61V-100V POWERDI50 |
| Manufacturer | Diodes Incorporated |
| Unit Price | Request a Quote |
| In Stock | 7,830 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 4 - May 9 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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DMTH10H015SPSQ-13 Resources
| Brand | Diodes Incorporated |
| ECAD Module |
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| Mfr. Part Number | DMTH10H015SPSQ-13 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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DMTH10H015SPSQ-13 Specifications
| Manufacturer | Diodes Incorporated |
| Series | Automotive, AEC-Q101 |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 8.4A (Ta), 50.5A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Rds On (Max) @ Id, Vgs | 14.5mOhm @ 20A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 30.1nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 2343pF @ 50V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta), 55W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerDI5060-8 |
| Package / Case | 8-PowerTDFN |
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Manufacturer Microchip Technology Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 350V Current - Continuous Drain (Id) @ 25°C 365mA (Tj) Drive Voltage (Max Rds On, Min Rds On) 3V, 10V Rds On (Max) @ Id, Vgs 6Ohm @ 750mA, 10V Vgs(th) (Max) @ Id 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 200pF @ 25V FET Feature - Power Dissipation (Max) 1.6W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-243AA (SOT-89) Package / Case TO-243AA |
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Manufacturer Rohm Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 8A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 800mOhm @ 4A, 10V Vgs(th) (Max) @ Id 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 21nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 680pF @ 25V FET Feature - Power Dissipation (Max) 50W (Tc) Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220FM Package / Case TO-220-3 Full Pack |
