Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

DMTH6004SK3Q-13

DMTH6004SK3Q-13

For Reference Only

Part Number DMTH6004SK3Q-13
PNEDA Part # DMTH6004SK3Q-13
Description MOSFET NCH 60V 100A TO252
Manufacturer Diodes Incorporated
Unit Price Request a Quote
In Stock 46,836
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 20 - May 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

DMTH6004SK3Q-13 Resources

Brand Diodes Incorporated
ECAD Module ECAD
Mfr. Part NumberDMTH6004SK3Q-13
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
DMTH6004SK3Q-13, DMTH6004SK3Q-13 Datasheet (Total Pages: 7, Size: 601.05 KB)
PDFDMTH6004SK3Q-13 Datasheet Cover
DMTH6004SK3Q-13 Datasheet Page 2 DMTH6004SK3Q-13 Datasheet Page 3 DMTH6004SK3Q-13 Datasheet Page 4 DMTH6004SK3Q-13 Datasheet Page 5 DMTH6004SK3Q-13 Datasheet Page 6 DMTH6004SK3Q-13 Datasheet Page 7

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • DMTH6004SK3Q-13 Datasheet
  • where to find DMTH6004SK3Q-13
  • Diodes Incorporated

  • Diodes Incorporated DMTH6004SK3Q-13
  • DMTH6004SK3Q-13 PDF Datasheet
  • DMTH6004SK3Q-13 Stock

  • DMTH6004SK3Q-13 Pinout
  • Datasheet DMTH6004SK3Q-13
  • DMTH6004SK3Q-13 Supplier

  • Diodes Incorporated Distributor
  • DMTH6004SK3Q-13 Price
  • DMTH6004SK3Q-13 Distributor

DMTH6004SK3Q-13 Specifications

ManufacturerDiodes Incorporated
SeriesAutomotive, AEC-Q101
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs3.8mOhm @ 90A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs95.4nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds4556pF @ 30V
FET Feature-
Power Dissipation (Max)3.9W (Ta), 180W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252-4L
Package / CaseTO-252-5, DPak (4 Leads + Tab), TO-252AD

The Products You May Be Interested In

AUIRF3315S

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

150V

Current - Continuous Drain (Id) @ 25°C

21A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

82mOhm @ 12A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

95nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1300pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.8W (Ta), 94W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

TPCA8052-H(TE12LQM

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

U-MOSVI-H

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

20A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

11.3mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

2.3V @ 200µA

Gate Charge (Qg) (Max) @ Vgs

25nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2110pF @ 10V

FET Feature

-

Power Dissipation (Max)

1.6W (Ta), 30W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SOP Advance (5x5)

Package / Case

8-PowerVDFN

AOC2423

Alpha & Omega Semiconductor

Manufacturer

Alpha & Omega Semiconductor Inc.

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

2A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 10V

Rds On (Max) @ Id, Vgs

80mOhm @ 1A, 10V

Vgs(th) (Max) @ Id

1.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

10nC @ 10V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

470pF @ 10V

FET Feature

-

Power Dissipation (Max)

600mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

4-AlphaDFN (0.97x0.97)

Package / Case

4-SMD, No Lead

DMN3033LSNQ-7

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

6A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

30mOhm @ 6A, 10V

Vgs(th) (Max) @ Id

2.1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

10.5nC @ 5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

755pF @ 10V

FET Feature

-

Power Dissipation (Max)

1.4W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SC-59

Package / Case

TO-236-3, SC-59, SOT-23-3

SIHB30N60E-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

29A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

125mOhm @ 15A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

130nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

2600pF @ 100V

FET Feature

-

Power Dissipation (Max)

250W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Recently Sold

SP0502BAHTG

SP0502BAHTG

Littelfuse

TVS DIODE 5.5V 8.5V SOT23-3

STM32F091VBT6

STM32F091VBT6

STMicroelectronics

IC MCU 32BIT 128KB FLASH 100LQFP

PIC18F63J11-I/PT

PIC18F63J11-I/PT

Microchip Technology

IC MCU 8BIT 8KB FLASH 64TQFP

HSMG-C680

HSMG-C680

Broadcom

LED GREEN CLEAR CHIP SMD R/A

LTC4417IUF#TRPBF

LTC4417IUF#TRPBF

Linear Technology/Analog Devices

IC OR CTRLR SRC SELECT 24QFN

SCMT22F505PRBA0

SCMT22F505PRBA0

CAPACITOR 5F 20% 5.5V THRU HOLE

IS42S16160G-7BLI-TR

IS42S16160G-7BLI-TR

ISSI, Integrated Silicon Solution Inc

IC DRAM 256M PARALLEL 54TFBGA

MAX9100EUK+T

MAX9100EUK+T

Maxim Integrated

IC COMPARATOR R-R SOT23-5

ATMEGA168PA-MUR

ATMEGA168PA-MUR

Microchip Technology

IC MCU 8BIT 16KB FLASH 32VQFN

MAX15303AA00+CM

MAX15303AA00+CM

Maxim Integrated

IC REG BUCK ADJUSTABLE 6A 40TQFN

NDT3055L

NDT3055L

ON Semiconductor

MOSFET N-CH 60V 4A SOT-223-4

MBRD1035CTLG

MBRD1035CTLG

ON Semiconductor

DIODE ARRAY SCHOTTKY 35V 5A DPAK