DNA30E2200FE
For Reference Only
| Part Number | DNA30E2200FE |
| PNEDA Part # | DNA30E2200FE |
| Description | DIODE GEN PURP 2.2KV 30A I4PAC |
| Manufacturer | IXYS |
| Unit Price | Request a Quote |
| In Stock | 8,874 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 16 - May 21 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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DNA30E2200FE Resources
| Brand | IXYS |
| ECAD Module |
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| Mfr. Part Number | DNA30E2200FE |
| Category | Semiconductors › Diodes & Rectifiers › Rectifiers - Single |
| Datasheet |
Payment Method
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- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
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- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
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DNA30E2200FE Specifications
| Manufacturer | IXYS |
| Series | - |
| Diode Type | Standard |
| Voltage - DC Reverse (Vr) (Max) | 2200V |
| Current - Average Rectified (Io) | 30A |
| Voltage - Forward (Vf) (Max) @ If | 1.25V @ 30A |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | - |
| Current - Reverse Leakage @ Vr | 40µA @ 2200V |
| Capacitance @ Vr, F | 7pF @ 700V, 1MHz |
| Mounting Type | Through Hole |
| Package / Case | TO-251-2, IPak |
| Supplier Device Package | i4-PAC |
| Operating Temperature - Junction | -55°C ~ 175°C |
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Manufacturer Diodes Incorporated Series - Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 35V Current - Average Rectified (Io) 16A Voltage - Forward (Vf) (Max) @ If 630mV @ 16A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 200µA @ 35V Capacitance @ Vr, F 450pF @ 4V, 1MHz Mounting Type Through Hole Package / Case TO-220-2 Supplier Device Package TO-220AC Operating Temperature - Junction -65°C ~ 150°C |
Manufacturer Vishay Semiconductor Diodes Division Series SUPERECTIFIER® Diode Type Standard Voltage - DC Reverse (Vr) (Max) 1000V Current - Average Rectified (Io) 1A Voltage - Forward (Vf) (Max) @ If 1.3V @ 1A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 500ns Current - Reverse Leakage @ Vr 5µA @ 1000V Capacitance @ Vr, F 15pF @ 4V, 1MHz Mounting Type Through Hole Package / Case DO-204AL, DO-41, Axial Supplier Device Package DO-204AL (DO-41) Operating Temperature - Junction -65°C ~ 175°C |
Manufacturer GeneSiC Semiconductor Series - Diode Type Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max) 400V Current - Average Rectified (Io) 16A Voltage - Forward (Vf) (Max) @ If 1.1V @ 16A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 10µA @ 50V Capacitance @ Vr, F - Mounting Type Chassis, Stud Mount Package / Case DO-203AA, DO-4, Stud Supplier Device Package - Operating Temperature - Junction -65°C ~ 175°C |
