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DRA2523E0L

DRA2523E0L

For Reference Only

Part Number DRA2523E0L
PNEDA Part # DRA2523E0L
Description TRANS PREBIAS PNP 200MW MINI3
Manufacturer Panasonic Electronic Components
Unit Price Request a Quote
In Stock 2,952
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 2 - May 7 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

DRA2523E0L Resources

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DRA2523E0L Specifications

ManufacturerPanasonic Electronic Components
Series-
Transistor TypePNP - Pre-Biased
Current - Collector (Ic) (Max)500mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1)2.2 kOhms
Resistor - Emitter Base (R2)2.2 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 100mA, 10V
Vce Saturation (Max) @ Ib, Ic250mV @ 5mA, 100mA
Current - Collector Cutoff (Max)1µA
Frequency - Transition-
Power - Max200mW
Mounting TypeSurface Mount
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackageMini3-G3-B

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Resistor - Base (R1)

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Resistor - Emitter Base (R2)

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DC Current Gain (hFE) (Min) @ Ic, Vce

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Frequency - Transition

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Current - Collector (Ic) (Max)

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Voltage - Collector Emitter Breakdown (Max)

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Resistor - Base (R1)

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Resistor - Emitter Base (R2)

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DC Current Gain (hFE) (Min) @ Ic, Vce

100 @ 1mA, 5V

Vce Saturation (Max) @ Ib, Ic

150mV @ 500µA, 10mA

Current - Collector Cutoff (Max)

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Frequency - Transition

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Power - Max

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Package / Case

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Supplier Device Package

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Manufacturer

Panasonic Electronic Components

Series

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Transistor Type

PNP - Pre-Biased

Current - Collector (Ic) (Max)

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Voltage - Collector Emitter Breakdown (Max)

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Resistor - Base (R1)

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Resistor - Emitter Base (R2)

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DC Current Gain (hFE) (Min) @ Ic, Vce

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Vce Saturation (Max) @ Ib, Ic

250mV @ 300µA, 10mA

Current - Collector Cutoff (Max)

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Frequency - Transition

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Power - Max

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Package / Case

TO-236-3, SC-59, SOT-23-3

Supplier Device Package

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Panasonic Electronic Components

Manufacturer

Panasonic Electronic Components

Series

-

Transistor Type

PNP - Pre-Biased

Current - Collector (Ic) (Max)

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Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

4.7 kOhms

Resistor - Emitter Base (R2)

10 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

30 @ 5mA, 10V

Vce Saturation (Max) @ Ib, Ic

250mV @ 500µA, 10mA

Current - Collector Cutoff (Max)

500nA

Frequency - Transition

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Power - Max

200mW

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Supplier Device Package

Mini3-G3-B

UNR911EJ0L

Panasonic Electronic Components

Manufacturer

Panasonic Electronic Components

Series

-

Transistor Type

PNP - Pre-Biased

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

47 kOhms

Resistor - Emitter Base (R2)

22 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

60 @ 5mA, 10V

Vce Saturation (Max) @ Ib, Ic

250mV @ 300µA, 10mA

Current - Collector Cutoff (Max)

500nA

Frequency - Transition

80MHz

Power - Max

125mW

Mounting Type

Surface Mount

Package / Case

SC-89, SOT-490

Supplier Device Package

SSMini3-F1

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