DRDNB16W-7
For Reference Only
| Part Number | DRDNB16W-7 |
| PNEDA Part # | DRDNB16W-7 |
| Description | TRANS PREBIAS NPN/DIODE SOT363 |
| Manufacturer | Diodes Incorporated |
| Unit Price | Request a Quote |
| In Stock | 138,852 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 13 - Jun 18 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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DRDNB16W-7 Resources
| Brand | Diodes Incorporated |
| ECAD Module |
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| Mfr. Part Number | DRDNB16W-7 |
| Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - Single, Pre-Biased |
| Datasheet |
Payment Method
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- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
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- If you have special order instructions,please note it on the ordering pages.
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- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
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DRDNB16W-7 Specifications
| Manufacturer | Diodes Incorporated |
| Series | - |
| Transistor Type | NPN - Pre-Biased + Diode |
| Current - Collector (Ic) (Max) | 600mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Resistor - Base (R1) | 1 kOhms |
| Resistor - Emitter Base (R2) | 10 kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 56 @ 50mA, 5V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 2.5mA, 50mA |
| Current - Collector Cutoff (Max) | 500nA |
| Frequency - Transition | 200MHz |
| Power - Max | 200mW |
| Mounting Type | Surface Mount |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Supplier Device Package | SOT-363 |
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Manufacturer Panasonic Electronic Components Series - Transistor Type NPN - Pre-Biased Current - Collector (Ic) (Max) 500mA Voltage - Collector Emitter Breakdown (Max) 50V Resistor - Base (R1) 2.2 kOhms Resistor - Emitter Base (R2) 2.2 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 100mA, 10V Vce Saturation (Max) @ Ib, Ic 250mV @ 5mA, 100mA Current - Collector Cutoff (Max) 1µA Frequency - Transition 200MHz Power - Max 300mW Mounting Type Through Hole Package / Case 3-SSIP Supplier Device Package NS-B1 |
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