DS1230W-100IND+
For Reference Only
| Part Number | DS1230W-100IND+ |
| PNEDA Part # | DS1230W-100IND |
| Description | IC NVSRAM 256K PARALLEL 28EDIP |
| Manufacturer | Maxim Integrated |
| Unit Price | Request a Quote |
| In Stock | 3,744 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 16 - Jun 21 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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DS1230W-100IND+ Resources
| Brand | Maxim Integrated |
| ECAD Module |
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| Mfr. Part Number | DS1230W-100IND+ |
| Category | Semiconductors › Memory ICs › Memory |
| Datasheet |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
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DS1230W-100IND+ Specifications
| Manufacturer | Maxim Integrated |
| Series | - |
| Memory Type | Non-Volatile |
| Memory Format | NVSRAM |
| Technology | NVSRAM (Non-Volatile SRAM) |
| Memory Size | 256Kb (32K x 8) |
| Memory Interface | Parallel |
| Clock Frequency | - |
| Write Cycle Time - Word, Page | 100ns |
| Access Time | 100ns |
| Voltage - Supply | 3V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Through Hole |
| Package / Case | 28-DIP Module (0.600", 15.24mm) |
| Supplier Device Package | 28-EDIP |
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Manufacturer Micron Technology Inc. Series - Memory Type Volatile Memory Format DRAM Technology SDRAM - Mobile LPSDR Memory Size 512Mb (16M x 32) Memory Interface Parallel Clock Frequency 133MHz Write Cycle Time - Word, Page 15ns Access Time 5.4ns Voltage - Supply 1.7V ~ 1.95V Operating Temperature -40°C ~ 85°C (TA) Mounting Type Surface Mount Package / Case 90-VFBGA Supplier Device Package 90-VFBGA (10x13) |
