Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

DTA023JEBTL

DTA023JEBTL

For Reference Only

Part Number DTA023JEBTL
PNEDA Part # DTA023JEBTL
Description TRANS PREBIAS PNP 50V 0.15W SC89
Manufacturer Rohm Semiconductor
Unit Price Request a Quote
In Stock 5,292
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 16 - Jun 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

DTA023JEBTL Resources

Brand Rohm Semiconductor
ECAD Module ECAD
Mfr. Part NumberDTA023JEBTL
CategorySemiconductorsTransistorsTransistors - Bipolar (BJT) - Single, Pre-Biased
Datasheet
DTA023JEBTL, DTA023JEBTL Datasheet (Total Pages: 9, Size: 1,388.47 KB)
PDFDTA023JUBTL Datasheet Cover
DTA023JUBTL Datasheet Page 2 DTA023JUBTL Datasheet Page 3 DTA023JUBTL Datasheet Page 4 DTA023JUBTL Datasheet Page 5 DTA023JUBTL Datasheet Page 6 DTA023JUBTL Datasheet Page 7 DTA023JUBTL Datasheet Page 8 DTA023JUBTL Datasheet Page 9

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • DTA023JEBTL Datasheet
  • where to find DTA023JEBTL
  • Rohm Semiconductor

  • Rohm Semiconductor DTA023JEBTL
  • DTA023JEBTL PDF Datasheet
  • DTA023JEBTL Stock

  • DTA023JEBTL Pinout
  • Datasheet DTA023JEBTL
  • DTA023JEBTL Supplier

  • Rohm Semiconductor Distributor
  • DTA023JEBTL Price
  • DTA023JEBTL Distributor

DTA023JEBTL Specifications

ManufacturerRohm Semiconductor
Series-
Transistor TypePNP - Pre-Biased
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1)2.2 kOhms
Resistor - Emitter Base (R2)47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic150mV @ 500µA, 5mA
Current - Collector Cutoff (Max)-
Frequency - Transition250MHz
Power - Max150mW
Mounting TypeSurface Mount
Package / CaseSC-89, SOT-490
Supplier Device PackageEMT3F (SOT-416FL)

The Products You May Be Interested In

MMUN2130LT1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

PNP - Pre-Biased

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

1 kOhms

Resistor - Emitter Base (R2)

1 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

3 @ 5mA, 10V

Vce Saturation (Max) @ Ib, Ic

250mV @ 5mA, 10mA

Current - Collector Cutoff (Max)

500nA

Frequency - Transition

-

Power - Max

246mW

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Supplier Device Package

SOT-23-3 (TO-236)

BCR 185L3 E6327

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

Transistor Type

PNP - Pre-Biased

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

10 kOhms

Resistor - Emitter Base (R2)

47 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

70 @ 5mA, 5V

Vce Saturation (Max) @ Ib, Ic

300mV @ 500µA, 10mA

Current - Collector Cutoff (Max)

100nA (ICBO)

Frequency - Transition

200MHz

Power - Max

250mW

Mounting Type

Surface Mount

Package / Case

SC-101, SOT-883

Supplier Device Package

PG-TSLP-3-4

DDTD142JC-7-F

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

Transistor Type

NPN - Pre-Biased

Current - Collector (Ic) (Max)

500mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

470 Ohms

Resistor - Emitter Base (R2)

10 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

56 @ 50mA, 5V

Vce Saturation (Max) @ Ib, Ic

300mV @ 2.5mA, 50mA

Current - Collector Cutoff (Max)

500nA

Frequency - Transition

200MHz

Power - Max

200mW

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Supplier Device Package

SOT-23-3

DTD143TKT146

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

Transistor Type

NPN - Pre-Biased

Current - Collector (Ic) (Max)

500mA

Voltage - Collector Emitter Breakdown (Max)

40V

Resistor - Base (R1)

4.7 kOhms

Resistor - Emitter Base (R2)

-

DC Current Gain (hFE) (Min) @ Ic, Vce

100 @ 50mA, 5V

Vce Saturation (Max) @ Ib, Ic

300mV @ 2.5mA, 50mA

Current - Collector Cutoff (Max)

500nA (ICBO)

Frequency - Transition

200MHz

Power - Max

200mW

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Supplier Device Package

SMT3

PDTA143EQAZ

Nexperia

Manufacturer

Nexperia USA Inc.

Series

Automotive, AEC-Q101

Transistor Type

PNP - Pre-Biased

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

4.7 kOhms

Resistor - Emitter Base (R2)

4.7 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

30 @ 10mA, 5V

Vce Saturation (Max) @ Ib, Ic

150mV @ 500µA, 10mA

Current - Collector Cutoff (Max)

1µA

Frequency - Transition

180MHz

Power - Max

280mW

Mounting Type

Surface Mount

Package / Case

3-XDFN Exposed Pad

Supplier Device Package

DFN1010D-3

Recently Sold

MC68HC908GP32CFB

MC68HC908GP32CFB

NXP

IC MCU 8BIT 32KB FLASH 44QFP

STW14NM50

STW14NM50

STMicroelectronics

MOSFET N-CH 550V 14A TO-247

PIC18F2423-I/SO

PIC18F2423-I/SO

Microchip Technology

IC MCU 8BIT 16KB FLASH 28SOIC

LTST-C190TBKT

LTST-C190TBKT

Lite-On Inc.

LED BLUE CLEAR CHIP SMD

CMS15(TE12L,Q,M)

CMS15(TE12L,Q,M)

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 60V 3A M-FLAT

AD820BRZ

AD820BRZ

Analog Devices

IC OPAMP JFET 1 CIRCUIT 8SOIC

FDMS8558S

FDMS8558S

ON Semiconductor

MOSFET N-CH 25V 33A 8-PQFN

NR4018T4R7M

NR4018T4R7M

Taiyo Yuden

FIXED IND 4.7UH 1.2A 108 MOHM

PZTA92

PZTA92

ON Semiconductor

TRANS PNP 300V 0.5A SOT-223

SP3012-06UTG

SP3012-06UTG

Littelfuse

TVS DIODE 5V 7V 14UDFN

LSXH4L

LSXH4L

Honeywell Sensing and Productivity Solutions

SWITCH SNAP ACTION DPDT 10A 120V

74LVC02AD,118

74LVC02AD,118

Nexperia

IC GATE NOR 4CH 2-INP 14SO