EFC6602R-A-TR
For Reference Only
| Part Number | EFC6602R-A-TR |
| PNEDA Part # | EFC6602R-A-TR |
| Description | MOSFET 2N-CH EFCP |
| Manufacturer | ON Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 2,232 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 20 - May 25 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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EFC6602R-A-TR Resources
| Brand | ON Semiconductor |
| ECAD Module |
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| Mfr. Part Number | EFC6602R-A-TR |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Arrays |
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EFC6602R-A-TR Specifications
| Manufacturer | ON Semiconductor |
| Series | - |
| FET Type | 2 N-Channel (Dual) Common Drain |
| FET Feature | Logic Level Gate, 2.5V Drive |
| Drain to Source Voltage (Vdss) | - |
| Current - Continuous Drain (Id) @ 25°C | - |
| Rds On (Max) @ Id, Vgs | - |
| Vgs(th) (Max) @ Id | - |
| Gate Charge (Qg) (Max) @ Vgs | 55nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Power - Max | 2W |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 6-XFBGA, FCBGA |
| Supplier Device Package | EFCP2718-6CE-020 |
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Manufacturer Renesas Electronics America Series - FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 5A Rds On (Max) @ Id, Vgs 56mOhm @ 2.5A, 10V Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs 13.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 640pF @ 10V Power - Max 1.12W Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case 8-PowerWDFN Supplier Device Package 8-SOP |
