EFC6602R-TR
For Reference Only
| Part Number | EFC6602R-TR |
| PNEDA Part # | EFC6602R-TR |
| Description | MOSFET 2N-CH EFCP |
| Manufacturer | ON Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 6,570 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 22 - Jun 27 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
EFC6602R-TR Resources
| Brand | ON Semiconductor |
| ECAD Module |
|
| Mfr. Part Number | EFC6602R-TR |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Arrays |
| Datasheet |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- EFC6602R-TR Datasheet
- where to find EFC6602R-TR
- ON Semiconductor
- ON Semiconductor EFC6602R-TR
- EFC6602R-TR PDF Datasheet
- EFC6602R-TR Stock
- EFC6602R-TR Pinout
- Datasheet EFC6602R-TR
- EFC6602R-TR Supplier
- ON Semiconductor Distributor
- EFC6602R-TR Price
- EFC6602R-TR Distributor
EFC6602R-TR Specifications
| Manufacturer | ON Semiconductor |
| Series | - |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate, 2.5V Drive |
| Drain to Source Voltage (Vdss) | - |
| Current - Continuous Drain (Id) @ 25°C | - |
| Rds On (Max) @ Id, Vgs | - |
| Vgs(th) (Max) @ Id | - |
| Gate Charge (Qg) (Max) @ Vgs | 55nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Power - Max | 2W |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 6-XFBGA, FCBGA |
| Supplier Device Package | EFCP2718-6CE-020 |
The Products You May Be Interested In
|
Manufacturer Toshiba Semiconductor and Storage Series U-MOSIII FET Type 2 N-Channel (Dual) FET Feature Standard Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 100mA (Ta) Rds On (Max) @ Id, Vgs 3.2Ohm @ 10mA, 4V Vgs(th) (Max) @ Id 1.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs - Input Capacitance (Ciss) (Max) @ Vds 15.1pF @ 3V Power - Max 300mW Operating Temperature 150°C Mounting Type Surface Mount Package / Case 6-TSSOP, SC-88, SOT-363 Supplier Device Package US6 |
Manufacturer Nexperia USA Inc. Series TrenchPLUS FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 65V Current - Continuous Drain (Id) @ 25°C 13.6A (Tc) Rds On (Max) @ Id, Vgs 12.3mOhm @ 10A, 10V Vgs(th) (Max) @ Id 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs 40.2nC @ 5V Input Capacitance (Ciss) (Max) @ Vds 3052pF @ 25V Power - Max 4.75W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 20-SOIC (0.295", 7.50mm Width) Supplier Device Package 20-SO |
Manufacturer Cree/Wolfspeed Series - FET Type 2 N-Channel (Half Bridge) FET Feature Silicon Carbide (SiC) Drain to Source Voltage (Vdss) 1200V Current - Continuous Drain (Id) @ 25°C 450A Rds On (Max) @ Id, Vgs 3.7mOhm @ 450A, 15V Vgs(th) (Max) @ Id 3.6V @ 132mA Gate Charge (Qg) (Max) @ Vgs 1330nC @ 15V Input Capacitance (Ciss) (Max) @ Vds 38000pF @ 800V Power - Max 50mW Operating Temperature -40°C ~ 175°C (TJ) Mounting Type Chassis Mount Package / Case Module Supplier Device Package Module |
Manufacturer Diodes Incorporated Series - FET Type 2 P-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 530mA Rds On (Max) @ Id, Vgs 900mOhm @ 430mA, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs - Input Capacitance (Ciss) (Max) @ Vds 175pF @ 16V Power - Max 400mW Operating Temperature -65°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case SOT-563, SOT-666 Supplier Device Package SOT-563 |
Manufacturer Infineon Technologies Series HEXFET® FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 8.9A Rds On (Max) @ Id, Vgs 18.3mOhm @ 8.9A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 7.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds 540pF @ 10V Power - Max 2W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SO |
