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EL817(M)(B)-G

EL817(M)(B)-G

For Reference Only

Part Number EL817(M)(B)-G
PNEDA Part # EL817-M-B-G
Description OPTOISOLTR 5KV TRANSISTOR 4-DIP
Manufacturer Everlight Electronics Co Ltd
Unit Price Request a Quote
In Stock 2,790
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 12 - May 17 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

EL817(M)(B)-G Resources

Brand Everlight Electronics Co Ltd
ECAD Module ECAD
Mfr. Part NumberEL817(M)(B)-G
CategorySemiconductorsIsolatorsOptoisolators - Transistor, Photovoltaic Output
Datasheet
EL817(M)(B)-G, EL817(M)(B)-G Datasheet (Total Pages: 14, Size: 747.83 KB)
PDFEL817(S)(TB)-VG Datasheet Cover
EL817(S)(TB)-VG Datasheet Page 2 EL817(S)(TB)-VG Datasheet Page 3 EL817(S)(TB)-VG Datasheet Page 4 EL817(S)(TB)-VG Datasheet Page 5 EL817(S)(TB)-VG Datasheet Page 6 EL817(S)(TB)-VG Datasheet Page 7 EL817(S)(TB)-VG Datasheet Page 8 EL817(S)(TB)-VG Datasheet Page 9 EL817(S)(TB)-VG Datasheet Page 10 EL817(S)(TB)-VG Datasheet Page 11

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EL817(M)(B)-G Specifications

ManufacturerEverlight Electronics Co Ltd
Series-
Number of Channels1
Voltage - Isolation5000Vrms
Current Transfer Ratio (Min)130% @ 5mA
Current Transfer Ratio (Max)260% @ 5mA
Turn On / Turn Off Time (Typ)-
Rise / Fall Time (Typ)6µs, 8µs
Input TypeDC
Output TypeTransistor
Voltage - Output (Max)80V
Current - Output / Channel50mA
Voltage - Forward (Vf) (Typ)1.2V
Current - DC Forward (If) (Max)60mA
Vce Saturation (Max)200mV
Operating Temperature-55°C ~ 110°C
Mounting TypeThrough Hole
Package / Case4-DIP (0.400", 10.16mm)
Supplier Device Package4-DIP

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