EMF24T2R
For Reference Only
| Part Number | EMF24T2R |
| PNEDA Part # | EMF24T2R |
| Description | TRANS NPN PREBIAS/NPN 0.15W EMT6 |
| Manufacturer | Rohm Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 7,614 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 25 - Jun 30 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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EMF24T2R Resources
| Brand | Rohm Semiconductor |
| ECAD Module |
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| Mfr. Part Number | EMF24T2R |
| Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
| Datasheet |
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EMF24T2R Specifications
| Manufacturer | Rohm Semiconductor |
| Series | - |
| Transistor Type | 1 NPN Pre-Biased, 1 NPN |
| Current - Collector (Ic) (Max) | 100mA, 150mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Resistor - Base (R1) | 10kOhms |
| Resistor - Emitter Base (R2) | 10kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 5mA, 5V / 180 @ 1mA, 6V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA / 400mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 500nA |
| Frequency - Transition | 250MHz, 180MHz |
| Power - Max | 150mW |
| Mounting Type | Surface Mount |
| Package / Case | SOT-563, SOT-666 |
| Supplier Device Package | EMT6 |
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Manufacturer Toshiba Semiconductor and Storage Series * Transistor Type - Current - Collector (Ic) (Max) - Voltage - Collector Emitter Breakdown (Max) - Resistor - Base (R1) - Resistor - Emitter Base (R2) - DC Current Gain (hFE) (Min) @ Ic, Vce - Vce Saturation (Max) @ Ib, Ic - Current - Collector Cutoff (Max) - Frequency - Transition - Power - Max - Mounting Type - Package / Case - Supplier Device Package - |
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