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EPC2010C

EPC2010C

For Reference Only

Part Number EPC2010C
PNEDA Part # EPC2010C
Description GANFET TRANS 200V 22A BUMPED DIE
Manufacturer EPC
Unit Price Request a Quote
In Stock 78,360
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 30 - Apr 4 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

EPC2010C Resources

Brand EPC
ECAD Module ECAD
Mfr. Part NumberEPC2010C
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
EPC2010C, EPC2010C Datasheet (Total Pages: 6, Size: 1,136.21 KB)
PDFEPC2010C Datasheet Cover
EPC2010C Datasheet Page 2 EPC2010C Datasheet Page 3 EPC2010C Datasheet Page 4 EPC2010C Datasheet Page 5 EPC2010C Datasheet Page 6

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EPC2010C Specifications

ManufacturerEPC
SerieseGaN®
FET TypeN-Channel
TechnologyGaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C22A (Ta)
Drive Voltage (Max Rds On, Min Rds On)5V
Rds On (Max) @ Id, Vgs25mOhm @ 12A, 5V
Vgs(th) (Max) @ Id2.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs5.3nC @ 5V
Vgs (Max)+6V, -4V
Input Capacitance (Ciss) (Max) @ Vds540pF @ 100V
FET Feature-
Power Dissipation (Max)-
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDie Outline (7-Solder Bar)
Package / CaseDie

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