Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

EPC2010C

EPC2010C

For Reference Only

Part Number EPC2010C
PNEDA Part # EPC2010C
Description GANFET TRANS 200V 22A BUMPED DIE
Manufacturer EPC
Unit Price Request a Quote
In Stock 78,360
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 4 - May 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

EPC2010C Resources

Brand EPC
ECAD Module ECAD
Mfr. Part NumberEPC2010C
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
EPC2010C, EPC2010C Datasheet (Total Pages: 6, Size: 1,136.21 KB)
PDFEPC2010C Datasheet Cover
EPC2010C Datasheet Page 2 EPC2010C Datasheet Page 3 EPC2010C Datasheet Page 4 EPC2010C Datasheet Page 5 EPC2010C Datasheet Page 6

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • EPC2010C Datasheet
  • where to find EPC2010C
  • EPC

  • EPC EPC2010C
  • EPC2010C PDF Datasheet
  • EPC2010C Stock

  • EPC2010C Pinout
  • Datasheet EPC2010C
  • EPC2010C Supplier

  • EPC Distributor
  • EPC2010C Price
  • EPC2010C Distributor

EPC2010C Specifications

ManufacturerEPC
SerieseGaN®
FET TypeN-Channel
TechnologyGaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C22A (Ta)
Drive Voltage (Max Rds On, Min Rds On)5V
Rds On (Max) @ Id, Vgs25mOhm @ 12A, 5V
Vgs(th) (Max) @ Id2.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs5.3nC @ 5V
Vgs (Max)+6V, -4V
Input Capacitance (Ciss) (Max) @ Vds540pF @ 100V
FET Feature-
Power Dissipation (Max)-
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDie Outline (7-Solder Bar)
Package / CaseDie

The Products You May Be Interested In

GP1M012A060H

Global Power Technologies Group

Manufacturer

Global Power Technologies Group

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

12A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

650mOhm @ 6A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

39nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

2308pF @ 25V

FET Feature

-

Power Dissipation (Max)

231W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220

Package / Case

TO-220-3

AOB2618L

Alpha & Omega Semiconductor

Manufacturer

Alpha & Omega Semiconductor Inc.

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

7A (Ta), 23A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

19mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

20nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

950pF @ 30V

FET Feature

-

Power Dissipation (Max)

2.1W (Ta), 41.5W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-263 (D²Pak)

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

APT30F50S

Microsemi

Manufacturer

Microsemi Corporation

Series

POWER MOS 8™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

30A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

190mOhm @ 14A, 10V

Vgs(th) (Max) @ Id

5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

115nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

4525pF @ 25V

FET Feature

-

Power Dissipation (Max)

415W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D3Pak

Package / Case

TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

NVMFS6B05NWFT1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

8mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

44nC @ 10V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

3100pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.8W (Ta), 165W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

5-DFN (5x6) (8-SOFL)

Package / Case

8-PowerTDFN

MCU20P10-TP

Micro Commercial Co

Manufacturer

Micro Commercial Co

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

20A

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

100mOhm @ 16A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

61nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2100pF @ 25V

FET Feature

-

Power Dissipation (Max)

70W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D-Pak

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Recently Sold

DS3232SN#

DS3232SN#

Maxim Integrated

IC RTC CLK/CALENDAR I2C 20-SOIC

ISL68137IRAZ-T7A

ISL68137IRAZ-T7A

Renesas Electronics America Inc.

IC REG CTRLR PMBUS 48QFN

74VHC14MTCX

74VHC14MTCX

ON Semiconductor

IC INVERTER SCHMITT 6CH 14TSSOP

AD694ARZ-REEL

AD694ARZ-REEL

Analog Devices

IC TRANSMITTER 4-20MA 16-SOIC

MT29F2G16ABBEAHC-AIT:E TR

MT29F2G16ABBEAHC-AIT:E TR

Micron Technology Inc.

IC FLASH 2G PARALLEL 63VFBGA

MAX815TESA+T

MAX815TESA+T

Maxim Integrated

IC SUPERVISOR MPU LP 8SOIC

L6563H

L6563H

STMicroelectronics

IC PFC CTRLR TRANSITION 16SOIC

SMF5.0A

SMF5.0A

Littelfuse

TVS DIODE 5V 9.2V SOD123F

AK4951EN

AK4951EN

AKM Semiconductor Inc.

IC STEREO CODEC 24BIT 32QFN

PIC12F1822-I/SN

PIC12F1822-I/SN

Microchip Technology

IC MCU 8BIT 3.5KB FLASH 8SOIC

DS5000FP-16+

DS5000FP-16+

Maxim Integrated

IC MCU 8BIT EXTRNL NVSRAM 80QFP

DMN6075S-7

DMN6075S-7

Diodes Incorporated

MOSFET N-CH 60V 2A SOT23-3