Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

EPC2014C

EPC2014C

For Reference Only

Part Number EPC2014C
PNEDA Part # EPC2014C
Description GANFET TRANS 40V 10A BUMPED DIE
Manufacturer EPC
Unit Price
1 ---------- $2,247.4079
50 ---------- $2,142.0606
100 ---------- $2,036.7134
200 ---------- $1,931.3661
400 ---------- $1,843.5768
500 ---------- $1,755.7874
In Stock 8,381
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jul 17 - Jul 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

EPC2014C Resources

Brand EPC
ECAD Module ECAD
Mfr. Part NumberEPC2014C
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
EPC2014C, EPC2014C Datasheet (Total Pages: 6, Size: 1,207.54 KB)
PDFEPC2014C Datasheet Cover
EPC2014C Datasheet Page 2 EPC2014C Datasheet Page 3 EPC2014C Datasheet Page 4 EPC2014C Datasheet Page 5 EPC2014C Datasheet Page 6

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • EPC2014C Datasheet
  • where to find EPC2014C
  • EPC

  • EPC EPC2014C
  • EPC2014C PDF Datasheet
  • EPC2014C Stock

  • EPC2014C Pinout
  • Datasheet EPC2014C
  • EPC2014C Supplier

  • EPC Distributor
  • EPC2014C Price
  • EPC2014C Distributor

EPC2014C Specifications

ManufacturerEPC
SerieseGaN®
FET TypeN-Channel
TechnologyGaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C10A (Ta)
Drive Voltage (Max Rds On, Min Rds On)5V
Rds On (Max) @ Id, Vgs16mOhm @ 10A, 5V
Vgs(th) (Max) @ Id2.5V @ 2mA
Gate Charge (Qg) (Max) @ Vgs2.5nC @ 5V
Vgs (Max)+6V, -4V
Input Capacitance (Ciss) (Max) @ Vds300pF @ 20V
FET Feature-
Power Dissipation (Max)-
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDie Outline (5-Solder Bar)
Package / CaseDie

The Products You May Be Interested In

UPA2752GR-E1-AT

Renesas Electronics America

Manufacturer

Renesas Electronics America

Series

-

FET Type

-

Technology

-

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

-

Supplier Device Package

-

Package / Case

-

IRFPS30N60KPBF

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

30A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

190mOhm @ 18A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

220nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

5870pF @ 25V

FET Feature

-

Power Dissipation (Max)

450W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

SUPER-247™ (TO-274AA)

Package / Case

TO-274AA

IRFB9N60APBF

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

9.2A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

750mOhm @ 5.5A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

49nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1400pF @ 25V

FET Feature

-

Power Dissipation (Max)

170W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

TPCA8023-H(TE12LQM

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

21A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

12.9mOhm @ 11A, 10V

Vgs(th) (Max) @ Id

2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

21nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2150pF @ 10V

FET Feature

-

Power Dissipation (Max)

1.6W (Ta), 30W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SOP Advance (5x5)

Package / Case

8-PowerVDFN

STF18NM80

STMicroelectronics

Manufacturer

STMicroelectronics

Series

MDmesh™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

800V

Current - Continuous Drain (Id) @ 25°C

17A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

295mOhm @ 8.5A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

70nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

2070pF @ 50V

FET Feature

-

Power Dissipation (Max)

40W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220FP

Package / Case

TO-220-3 Full Pack

Recently Sold

AD9837BCPZ-RL

AD9837BCPZ-RL

Analog Devices

IC DDS 16MHZ 10BIT 10LFCSP

VLMRGB343-ST-UV-RS

VLMRGB343-ST-UV-RS

Vishay Semiconductor Opto Division

LED RGB 4PLCC SMD

1SS319(TE85L,F)

1SS319(TE85L,F)

Toshiba Semiconductor and Storage

DIODE SCHOTKY GP 40V 100MA SC61B

BLM18PG471SN1D

BLM18PG471SN1D

Murata

FERRITE BEAD 470 OHM 0603 1LN

TNY290PG

TNY290PG

Power Integrations

IC OFF-LINE SWITCH PWM 8DIP

AD5254BRUZ1-RL7

AD5254BRUZ1-RL7

Analog Devices

IC DGTL POT 1KOHM 256TAP 20TSSOP

SP3232EEN-L

SP3232EEN-L

MaxLinear, Inc.

IC TRANSCEIVER FULL 2/2 16SOIC

LSM9DS1TR

LSM9DS1TR

STMicroelectronics

IMU ACCEL/GYRO/MAG I2C/SPI 24LGA

HD64F3664FPV

HD64F3664FPV

Renesas Electronics America

IC MCU 16BIT 32KB FLASH 64LQFP

ECLAMP2410P.TCT

ECLAMP2410P.TCT

Semtech

FILTER RC(PI) 45 OHM/12PF SMD

SHT11

SHT11

Sensirion AG

SENSOR HUMID/TEMP 5V DTL 3% SMD

TDA10H0SB1

TDA10H0SB1

C&K

SWITCH SLIDE DIP SPST 25MA 24V