EPC2032
For Reference Only
| Part Number | EPC2032 |
| PNEDA Part # | EPC2032 |
| Manufacturer | EPC |
| Description | GANFET TRANS 100V 48A BUMPED DIE |
| Unit Price |
|
| In Stock | 2,448 |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Payment |  |
| Shipping |  |
| Estimated Delivery | Oct 23 - Oct 28 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [PNEDA-Warranty]* |
EPC2032 Resources
| Brand | EPC |
| Mfr. Part Number | EPC2032 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
EPC2032 Specifications
| Manufacturer | EPC |
| Series | eGaN® |
| FET Type | N-Channel |
| Technology | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 48A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Rds On (Max) @ Id, Vgs | 4mOhm @ 30A, 5V |
| Vgs(th) (Max) @ Id | 2.5V @ 11mA |
| Gate Charge (Qg) (Max) @ Vgs | 15nC @ 5V |
| Vgs (Max) | +6V, -4V |
| Input Capacitance (Ciss) (Max) @ Vds | 1530pF @ 50V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | Die |
| Package / Case | Die |
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
The Products You May Be Interested In
|
Manufacturer ON Semiconductor Series UltraFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 80V Current - Continuous Drain (Id) @ 25°C 75A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 10mOhm @ 75A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 235nC @ 20V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3750pF @ 25V FET Feature - Power Dissipation (Max) 270W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220-3 Package / Case TO-220-3 |
Manufacturer NXP USA Inc. Series TrenchMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 150V Current - Continuous Drain (Id) @ 25°C 22.2A (Tc) Drive Voltage (Max Rds On, Min Rds On) 5V, 10V Rds On (Max) @ Id, Vgs 55mOhm @ 15A, 10V Vgs(th) (Max) @ Id 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs 36.2nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2080pF @ 25V FET Feature - Power Dissipation (Max) 62.5W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-HVSON (6x5) Package / Case 8-VDFN Exposed Pad |
Manufacturer Rohm Semiconductor Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 1.5A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4V, 10V Rds On (Max) @ Id, Vgs 280mOhm @ 1.5A, 10V Vgs(th) (Max) @ Id 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs 10nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 500pF @ 10V FET Feature - Power Dissipation (Max) 1W (Ta) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TSMT3 Package / Case SC-96 |
Manufacturer Infineon Technologies Series OptiMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 100A (Tc) Drive Voltage (Max Rds On, Min Rds On) 6V, 10V Rds On (Max) @ Id, Vgs 3mOhm @ 100A, 10V Vgs(th) (Max) @ Id 3.5V @ 275µA Gate Charge (Qg) (Max) @ Vgs 206nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 14800pF @ 50V FET Feature - Power Dissipation (Max) 300W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO262-3 Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA |
Manufacturer Infineon Technologies Series CoolMOS™ G7 FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 29A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 80mOhm @ 9.7A, 10V Vgs(th) (Max) @ Id 4V @ 490µA Gate Charge (Qg) (Max) @ Vgs 42nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1640pF @ 400V FET Feature - Power Dissipation (Max) 174W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-HDSOP-10-1 Package / Case 10-PowerSOP Module |
Quick Inquiry
Add to Shopping Cart
Contact Us
Don't hesitate to contact us if you have any question about EPC2032.
- CALL US
+86-0755-83210135 ext. 203
- EMAIL
- SKYPE
- WeChat
- Message
