Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

EPC2032

EPC2032 EPC2032

For Reference Only

Part Number EPC2032
PNEDA Part # EPC2032
Description GANFET TRANS 100V 48A BUMPED DIE
Manufacturer EPC
Unit Price Request a Quote
In Stock 2,448
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 21 - Mar 26 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

EPC2032 Resources

Brand EPC
ECAD Module ECAD
Mfr. Part NumberEPC2032
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
EPC2032, EPC2032 Datasheet (Total Pages: 6, Size: 1,289.48 KB)
PDFEPC2032 Datasheet Cover
EPC2032 Datasheet Page 2 EPC2032 Datasheet Page 3 EPC2032 Datasheet Page 4 EPC2032 Datasheet Page 5 EPC2032 Datasheet Page 6

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • EPC2032 Datasheet
  • where to find EPC2032
  • EPC

  • EPC EPC2032
  • EPC2032 PDF Datasheet
  • EPC2032 Stock

  • EPC2032 Pinout
  • Datasheet EPC2032
  • EPC2032 Supplier

  • EPC Distributor
  • EPC2032 Price
  • EPC2032 Distributor

EPC2032 Specifications

ManufacturerEPC
SerieseGaN®
FET TypeN-Channel
TechnologyGaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C48A (Ta)
Drive Voltage (Max Rds On, Min Rds On)5V
Rds On (Max) @ Id, Vgs4mOhm @ 30A, 5V
Vgs(th) (Max) @ Id2.5V @ 11mA
Gate Charge (Qg) (Max) @ Vgs15nC @ 5V
Vgs (Max)+6V, -4V
Input Capacitance (Ciss) (Max) @ Vds1530pF @ 50V
FET Feature-
Power Dissipation (Max)-
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDie
Package / CaseDie

The Products You May Be Interested In

SSM6J512NU,LF

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

U-MOSVII

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

12V

Current - Continuous Drain (Id) @ 25°C

10A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 8V

Rds On (Max) @ Id, Vgs

16.2mOhm @ 4A, 8V

Vgs(th) (Max) @ Id

1V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

19.5nC @ 4.5V

Vgs (Max)

±10V

Input Capacitance (Ciss) (Max) @ Vds

1400pF @ 6V

FET Feature

-

Power Dissipation (Max)

1.25W (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

6-UDFNB (2x2)

Package / Case

6-WDFN Exposed Pad

IPI030N10N3GXKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

100A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Rds On (Max) @ Id, Vgs

3mOhm @ 100A, 10V

Vgs(th) (Max) @ Id

3.5V @ 275µA

Gate Charge (Qg) (Max) @ Vgs

206nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

14800pF @ 50V

FET Feature

-

Power Dissipation (Max)

300W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO262-3

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

IRFBC30SPBF

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

3.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

2.2Ohm @ 2.2A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

31nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

660pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.1W (Ta), 74W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

HUFA75545P3

ON Semiconductor

Manufacturer

ON Semiconductor

Series

UltraFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

80V

Current - Continuous Drain (Id) @ 25°C

75A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

10mOhm @ 75A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

235nC @ 20V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3750pF @ 25V

FET Feature

-

Power Dissipation (Max)

270W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220-3

Package / Case

TO-220-3

DN3135N8-G

Microchip Technology

Manufacturer

Microchip Technology

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

350V

Current - Continuous Drain (Id) @ 25°C

135mA (Tj)

Drive Voltage (Max Rds On, Min Rds On)

0V

Rds On (Max) @ Id, Vgs

35Ohm @ 150mA, 0V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

120pF @ 25V

FET Feature

Depletion Mode

Power Dissipation (Max)

1.3W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-243AA (SOT-89)

Package / Case

TO-243AA

Recently Sold

4608X-102-103LF

4608X-102-103LF

Bourns

RES ARRAY 4 RES 10K OHM 8SIP

ADP191ACBZ-R7

ADP191ACBZ-R7

Analog Devices

IC CTLR HIGH LSIDE PWR SW 4WLCSP

SI8901D-A01-GS

SI8901D-A01-GS

Silicon Labs

IC ADC 10BIT SAR 16SOIC

SI2347DS-T1-GE3

SI2347DS-T1-GE3

Vishay Siliconix

MOSFET P-CH 30V 5A SOT-23

MBR4045PT

MBR4045PT

Diodes Incorporated

DIODE ARRAY SCHOTTKY 45V TO3P

IRLML6402TRPBF

IRLML6402TRPBF

Infineon Technologies

MOSFET P-CH 20V 3.7A SOT-23

A3P250-VQG100I

A3P250-VQG100I

Microsemi

IC FPGA 68 I/O 100VQFP

NTZD3154NT1G

NTZD3154NT1G

ON Semiconductor

MOSFET 2N-CH 20V 0.54A SOT-563

NFM41CC223R2A3L

NFM41CC223R2A3L

Murata

CAP FEEDTHRU 0.022UF 100V 1806

SQ3427EEV-T1-GE3

SQ3427EEV-T1-GE3

Vishay Siliconix

MOSFET P-CH 60V 5.5A 6TSOP

DS1339U-33+

DS1339U-33+

Maxim Integrated

IC RTC CLK/CALENDAR I2C 8-USOP

11R472C

11R472C

Murata Power Solutions

FIXED IND 4.7UH 1.3A 90 MOHM TH