Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

EPC2034

EPC2034

For Reference Only

Part Number EPC2034
PNEDA Part # EPC2034
Description GANFET TRANS 200V 48A BUMPED DIE
Manufacturer EPC
Unit Price Request a Quote
In Stock 4,770
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 18 - Jun 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

EPC2034 Resources

Brand EPC
ECAD Module ECAD
Mfr. Part NumberEPC2034
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
EPC2034, EPC2034 Datasheet (Total Pages: 6, Size: 1,939.84 KB)
PDFEPC2034 Datasheet Cover
EPC2034 Datasheet Page 2 EPC2034 Datasheet Page 3 EPC2034 Datasheet Page 4 EPC2034 Datasheet Page 5 EPC2034 Datasheet Page 6

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • EPC2034 Datasheet
  • where to find EPC2034
  • EPC

  • EPC EPC2034
  • EPC2034 PDF Datasheet
  • EPC2034 Stock

  • EPC2034 Pinout
  • Datasheet EPC2034
  • EPC2034 Supplier

  • EPC Distributor
  • EPC2034 Price
  • EPC2034 Distributor

EPC2034 Specifications

ManufacturerEPC
SerieseGaN®
FET TypeN-Channel
TechnologyGaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C48A (Ta)
Drive Voltage (Max Rds On, Min Rds On)5V
Rds On (Max) @ Id, Vgs10mOhm @ 20A, 5V
Vgs(th) (Max) @ Id2.5V @ 7mA
Gate Charge (Qg) (Max) @ Vgs8.8nC @ 5V
Vgs (Max)+6V, -4V
Input Capacitance (Ciss) (Max) @ Vds950pF @ 100V
FET Feature-
Power Dissipation (Max)-
Operating Temperature-40°C ~ 140°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDie
Package / CaseDie

The Products You May Be Interested In

Manufacturer

NXP USA Inc.

Series

TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

34V

Current - Continuous Drain (Id) @ 25°C

75A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

11mOhm @ 30A, 10V

Vgs(th) (Max) @ Id

3.8V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

53nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2506pF @ 25V

FET Feature

-

Power Dissipation (Max)

172W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

NP50P04SDG-E1-AY

Renesas Electronics America

Manufacturer

Renesas Electronics America

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

50A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

9.6mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

100nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

5000pF @ 10V

FET Feature

-

Power Dissipation (Max)

1.2W (Ta), 84W (Tc)

Operating Temperature

175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-252 (MP-3ZK)

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

FDV301N

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

25V

Current - Continuous Drain (Id) @ 25°C

220mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.7V, 4.5V

Rds On (Max) @ Id, Vgs

4Ohm @ 400mA, 4.5V

Vgs(th) (Max) @ Id

1.06V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

0.7nC @ 4.5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

9.5pF @ 10V

FET Feature

-

Power Dissipation (Max)

350mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-23

Package / Case

TO-236-3, SC-59, SOT-23-3

DMTH6016LFDFW-7

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

Automotive, AEC-Q101

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

9.4A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

18mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

15.3nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

925pF @ 30V

FET Feature

-

Power Dissipation (Max)

1.06W (Ta)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

U-DFN2020-6

Package / Case

6-UDFN Exposed Pad

IPP25N06S325XK

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

25A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

25.1mOhm @ 15A, 10V

Vgs(th) (Max) @ Id

4V @ 20µA

Gate Charge (Qg) (Max) @ Vgs

41nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1862pF @ 25V

FET Feature

-

Power Dissipation (Max)

48W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO220-3-1

Package / Case

TO-220-3

Recently Sold

74LVC1G04Z-7

74LVC1G04Z-7

Diodes Incorporated

IC INVERTER 1CH 1-INP SOT553

LE75181BBSC

LE75181BBSC

Microchip Technology

IC LINE CARD LCAS 1CH 16SOIC

MC9S08LL8CLF

MC9S08LL8CLF

NXP

IC MCU 8BIT 10KB FLASH 48LQFP

PIC18LF1320-I/P

PIC18LF1320-I/P

Microchip Technology

IC MCU 8BIT 8KB FLASH 18DIP

ACS723LLCTR-10AU-T

ACS723LLCTR-10AU-T

Allegro MicroSystems, LLC

SENSOR CURRENT HALL 10A DC

06035C104KAT2A

06035C104KAT2A

CAP CER 0.1UF 50V X7R 0603

1SMB36AT3G

1SMB36AT3G

Littelfuse

TVS DIODE 36V 58.1V SMB

7443556350

7443556350

Wurth Electronics

FIXED IND 3.5UH 22.5A 3.1 MOHM

IXGX120N60B

IXGX120N60B

IXYS

IGBT 600V 200A 660W TO247

BC807-16,215

BC807-16,215

Nexperia

TRANS PNP 45V 0.5A SOT23

NE3509M04-A

NE3509M04-A

CEL

FET RF 4V 2GHZ 4-SMINI

ASDXRRX005NDAA5

ASDXRRX005NDAA5

Honeywell Sensing and Productivity Solutions

SENSOR PRESSURE DIFF 5"" H2O 8DIP