EPC2035
For Reference Only
| Part Number | EPC2035 |
| PNEDA Part # | EPC2035 |
| Description | GANFET TRANS 60V 1A BUMPED DIE |
| Manufacturer | EPC |
| Unit Price | Request a Quote |
| In Stock | 49,314 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jul 11 - Jul 16 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
EPC2035 Resources
| Brand | EPC |
| ECAD Module |
|
| Mfr. Part Number | EPC2035 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- EPC2035 Datasheet
- where to find EPC2035
- EPC
- EPC EPC2035
- EPC2035 PDF Datasheet
- EPC2035 Stock
- EPC2035 Pinout
- Datasheet EPC2035
- EPC2035 Supplier
- EPC Distributor
- EPC2035 Price
- EPC2035 Distributor
EPC2035 Specifications
| Manufacturer | EPC |
| Series | eGaN® |
| FET Type | N-Channel |
| Technology | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 1A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Rds On (Max) @ Id, Vgs | 45mOhm @ 1A, 5V |
| Vgs(th) (Max) @ Id | 2.5V @ 800µA |
| Gate Charge (Qg) (Max) @ Vgs | 1.15nC @ 5V |
| Vgs (Max) | +6V, -4V |
| Input Capacitance (Ciss) (Max) @ Vds | 115pF @ 30V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | Die |
| Package / Case | Die |
The Products You May Be Interested In
|
Manufacturer Infineon Technologies Series CoolMOS™ P6 FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 53.5A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 70mOhm @ 20.6A, 10V Vgs(th) (Max) @ Id 4.5V @ 1.72mA Gate Charge (Qg) (Max) @ Vgs 100nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 4750pF @ 100V FET Feature - Power Dissipation (Max) 391W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO247-3 Package / Case TO-247-3 |
Manufacturer Infineon Technologies Series HEXFET® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 19A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 100mOhm @ 10A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 620pF @ 25V FET Feature - Power Dissipation (Max) 3.8W (Ta), 68W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-262 Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA |
Manufacturer ON Semiconductor Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 4.2A (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.7V, 4.5V Rds On (Max) @ Id, Vgs 60mOhm @ 4.2A, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 30nC @ 4.5V Vgs (Max) -8V Input Capacitance (Ciss) (Max) @ Vds 1000pF @ 10V FET Feature - Power Dissipation (Max) 1.8W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SuperSOT™-8 Package / Case 8-LSOP (0.130", 3.30mm Width) |
Manufacturer IXYS Series PolarP™ FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 10A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 1Ohm @ 5A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 50nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2840pF @ 25V FET Feature - Power Dissipation (Max) 300W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3 |
Manufacturer Vishay Siliconix Series TrenchFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 50A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 16mOhm @ 20A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1325pF @ 25V FET Feature - Power Dissipation (Max) 3.7W (Ta), 93W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-263 (D2Pak) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
