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EPC2100ENG

EPC2100ENG

For Reference Only

Part Number EPC2100ENG
PNEDA Part # EPC2100ENG
Description GAN TRANS 2N-CH 30V BUMPED DIE
Manufacturer EPC
Unit Price Request a Quote
In Stock 2,502
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 17 - May 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

EPC2100ENG Resources

Brand EPC
ECAD Module ECAD
Mfr. Part NumberEPC2100ENG
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
EPC2100ENG, EPC2100ENG Datasheet (Total Pages: 9, Size: 2,114.1 KB)
PDFEPC2100ENG Datasheet Cover
EPC2100ENG Datasheet Page 2 EPC2100ENG Datasheet Page 3 EPC2100ENG Datasheet Page 4 EPC2100ENG Datasheet Page 5 EPC2100ENG Datasheet Page 6 EPC2100ENG Datasheet Page 7 EPC2100ENG Datasheet Page 8 EPC2100ENG Datasheet Page 9

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EPC2100ENG Specifications

ManufacturerEPC
SerieseGaN®
FET Type2 N-Channel (Half Bridge)
FET FeatureGaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C10A (Ta), 40A (Ta)
Rds On (Max) @ Id, Vgs8.2mOhm @ 25A, 5V, 2.1mOhm @ 25A, 5V
Vgs(th) (Max) @ Id2.5V @ 4mA, 2.5V @ 16mA
Gate Charge (Qg) (Max) @ Vgs4.9nC @ 15V, 19nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds475pF @ 15V, 1960pF @ 15V
Power - Max-
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseDie
Supplier Device PackageDie

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