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EPC2102ENG

EPC2102ENG

For Reference Only

Part Number EPC2102ENG
PNEDA Part # EPC2102ENG
Description GAN TRANS 2N-CH 60V BUMPED DIE
Manufacturer EPC
Unit Price Request a Quote
In Stock 6,804
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 1 - May 6 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

EPC2102ENG Resources

Brand EPC
ECAD Module ECAD
Mfr. Part NumberEPC2102ENG
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
EPC2102ENG, EPC2102ENG Datasheet (Total Pages: 7, Size: 1,674.61 KB)
PDFEPC2102ENG Datasheet Cover
EPC2102ENG Datasheet Page 2 EPC2102ENG Datasheet Page 3 EPC2102ENG Datasheet Page 4 EPC2102ENG Datasheet Page 5 EPC2102ENG Datasheet Page 6 EPC2102ENG Datasheet Page 7

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EPC2102ENG Specifications

ManufacturerEPC
SerieseGaN®
FET Type2 N-Channel (Half Bridge)
FET FeatureGaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C23A
Rds On (Max) @ Id, Vgs4.4mOhm @ 20A, 5V
Vgs(th) (Max) @ Id2.5V @ 7mA
Gate Charge (Qg) (Max) @ Vgs6.8nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds830pF @ 30V
Power - Max-
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseDie
Supplier Device PackageDie

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