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EPC2105ENG

EPC2105ENG

For Reference Only

Part Number EPC2105ENG
PNEDA Part # EPC2105ENG
Description GAN TRANS 2N-CH 80V BUMPED DIE
Manufacturer EPC
Unit Price Request a Quote
In Stock 5,796
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 3 - May 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

EPC2105ENG Resources

Brand EPC
ECAD Module ECAD
Mfr. Part NumberEPC2105ENG
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
EPC2105ENG, EPC2105ENG Datasheet (Total Pages: 9, Size: 2,210.08 KB)
PDFEPC2105ENG Datasheet Cover
EPC2105ENG Datasheet Page 2 EPC2105ENG Datasheet Page 3 EPC2105ENG Datasheet Page 4 EPC2105ENG Datasheet Page 5 EPC2105ENG Datasheet Page 6 EPC2105ENG Datasheet Page 7 EPC2105ENG Datasheet Page 8 EPC2105ENG Datasheet Page 9

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EPC2105ENG Specifications

ManufacturerEPC
SerieseGaN®
FET Type2 N-Channel (Half Bridge)
FET FeatureGaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)80V
Current - Continuous Drain (Id) @ 25°C9.5A, 38A
Rds On (Max) @ Id, Vgs14.5mOhm @ 20A, 5V
Vgs(th) (Max) @ Id2.5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs2.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds300pF @ 40V
Power - Max-
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseDie
Supplier Device PackageDie

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