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EPC2106ENGRT

EPC2106ENGRT

For Reference Only

Part Number EPC2106ENGRT
PNEDA Part # EPC2106ENGRT
Description GAN TRANS 2N-CH 100V BUMPED DIE
Manufacturer EPC
Unit Price Request a Quote
In Stock 62,904
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 2 - May 7 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

EPC2106ENGRT Resources

Brand EPC
ECAD Module ECAD
Mfr. Part NumberEPC2106ENGRT
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
EPC2106ENGRT, EPC2106ENGRT Datasheet (Total Pages: 7, Size: 1,564.58 KB)
PDFEPC2106ENGRT Datasheet Cover
EPC2106ENGRT Datasheet Page 2 EPC2106ENGRT Datasheet Page 3 EPC2106ENGRT Datasheet Page 4 EPC2106ENGRT Datasheet Page 5 EPC2106ENGRT Datasheet Page 6 EPC2106ENGRT Datasheet Page 7

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EPC2106ENGRT Specifications

ManufacturerEPC
SerieseGaN®
FET Type2 N-Channel (Half Bridge)
FET FeatureGaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C1.7A
Rds On (Max) @ Id, Vgs70mOhm @ 2A, 5V
Vgs(th) (Max) @ Id2.5V @ 600µA
Gate Charge (Qg) (Max) @ Vgs0.73nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds75pF @ 50V
Power - Max-
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseDie
Supplier Device PackageDie

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