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EPC2108

EPC2108

For Reference Only

Part Number EPC2108
PNEDA Part # EPC2108
Description GANFET 3 N-CH 60V/100V 9BGA
Manufacturer EPC
Unit Price Request a Quote
In Stock 23,286
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 4 - May 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

EPC2108 Resources

Brand EPC
ECAD Module ECAD
Mfr. Part NumberEPC2108
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
EPC2108, EPC2108 Datasheet (Total Pages: 10, Size: 2,556.05 KB)
PDFEPC2108 Datasheet Cover
EPC2108 Datasheet Page 2 EPC2108 Datasheet Page 3 EPC2108 Datasheet Page 4 EPC2108 Datasheet Page 5 EPC2108 Datasheet Page 6 EPC2108 Datasheet Page 7 EPC2108 Datasheet Page 8 EPC2108 Datasheet Page 9 EPC2108 Datasheet Page 10

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EPC2108 Specifications

ManufacturerEPC
SerieseGaN®
FET Type3 N-Channel (Half Bridge + Synchronous Bootstrap)
FET FeatureGaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)60V, 100V
Current - Continuous Drain (Id) @ 25°C1.7A, 500mA
Rds On (Max) @ Id, Vgs190mOhm @ 2.5A, 5V, 3.3Ohm @ 2.5A, 5V
Vgs(th) (Max) @ Id2.5V @ 100µA, 2.5V @ 20µA
Gate Charge (Qg) (Max) @ Vgs0.22nC @ 5V, 0.044nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds22pF @ 30V, 7pF @ 30V
Power - Max-
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case9-VFBGA
Supplier Device Package9-BGA (1.35x1.35)

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