Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

EPC2214

EPC2214

For Reference Only

Part Number EPC2214
PNEDA Part # EPC2214
Description AEC-Q101 GAN FET 80V 20 MOHM
Manufacturer EPC
Unit Price Request a Quote
In Stock 56,268
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 19 - Jun 24 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

EPC2214 Resources

Brand EPC
ECAD Module ECAD
Mfr. Part NumberEPC2214
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
EPC2214, EPC2214 Datasheet (Total Pages: 6, Size: 1,450.75 KB)
PDFEPC2214 Datasheet Cover
EPC2214 Datasheet Page 2 EPC2214 Datasheet Page 3 EPC2214 Datasheet Page 4 EPC2214 Datasheet Page 5 EPC2214 Datasheet Page 6

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • EPC2214 Datasheet
  • where to find EPC2214
  • EPC

  • EPC EPC2214
  • EPC2214 PDF Datasheet
  • EPC2214 Stock

  • EPC2214 Pinout
  • Datasheet EPC2214
  • EPC2214 Supplier

  • EPC Distributor
  • EPC2214 Price
  • EPC2214 Distributor

EPC2214 Specifications

ManufacturerEPC
Series*
FET Type-
Technology-
Drain to Source Voltage (Vdss)-
Current - Continuous Drain (Id) @ 25°C-
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs-
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)-
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)-
Operating Temperature-
Mounting TypeSurface Mount
Supplier Device PackageDie
Package / CaseDie

The Products You May Be Interested In

IPB22N03S4L15ATMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

22A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

14.6mOhm @ 22A, 10V

Vgs(th) (Max) @ Id

2.2V @ 10µA

Gate Charge (Qg) (Max) @ Vgs

14nC @ 10V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

980pF @ 25V

FET Feature

-

Power Dissipation (Max)

31W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TO263-3-2

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

IPL60R065P7AUMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolMOS™ P7

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

41A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

65mOhm @ 15.9A, 10V

Vgs(th) (Max) @ Id

4V @ 800µA

Gate Charge (Qg) (Max) @ Vgs

67nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2895pF @ 400V

FET Feature

-

Power Dissipation (Max)

201W (Tc)

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-VSON-4

Package / Case

4-PowerTSFN

RV1C001ZPT2L

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

100mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.2V, 4.5V

Rds On (Max) @ Id, Vgs

3.8Ohm @ 100mA, 4.5V

Vgs(th) (Max) @ Id

1V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±10V

Input Capacitance (Ciss) (Max) @ Vds

15pF @ 10V

FET Feature

-

Power Dissipation (Max)

100mW (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

VML0806

Package / Case

3-SMD, No Lead

IRFI9620GPBF

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

3A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.5Ohm @ 1.8A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

15nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

340pF @ 15V

FET Feature

-

Power Dissipation (Max)

30W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220-3

Package / Case

TO-220-3 Full Pack, Isolated Tab

IRL530STRL

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

15A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4V, 5V

Rds On (Max) @ Id, Vgs

160mOhm @ 9A, 5V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

28nC @ 5V

Vgs (Max)

±10V

Input Capacitance (Ciss) (Max) @ Vds

930pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.7W (Ta), 88W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Recently Sold

AD8044ARZ-14

AD8044ARZ-14

Analog Devices

IC OPAMP VFB 4 CIRCUIT 14SOIC

CK45-R3DD102KAVRA

CK45-R3DD102KAVRA

TDK

CAP CER 1000PF 2KV RADIAL

WSL2512R0250FEA

WSL2512R0250FEA

Vishay Dale

RES 0.025 OHM 1% 1W 2512

LTC1760IFW#PBF

LTC1760IFW#PBF

Linear Technology/Analog Devices

IC MANAGER BATTERY DUAL 48TSSOP

FMMT593TA

FMMT593TA

Diodes Incorporated

TRANS PNP 100V 1A SOT23-3

WSL2010R0100FEA18

WSL2010R0100FEA18

Vishay Dale

RES 0.01 OHM 1% 1W 2010

T521X336M050ATE075

T521X336M050ATE075

KEMET

CAP TANTALUM 33UF 50V 2917

NP5Q128A13ESFC0E

NP5Q128A13ESFC0E

Micron Technology Inc.

IC PCM 128M SPI 66MHZ 16SO W

BK2125HS750-T

BK2125HS750-T

Taiyo Yuden

FERRITE BEAD 75 OHM 0805 1LN

AT24RF08CN-10SC

AT24RF08CN-10SC

Microchip Technology

IC EEPROM 8K I2C 100KHZ 8SOIC

ISL3152EIPZ

ISL3152EIPZ

Renesas Electronics America Inc.

IC TRANSCEIVER HALF 1/1 8DIP

STPS0520Z

STPS0520Z

STMicroelectronics

DIODE SCHOTTKY 20V 500MA SOD123