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ES3DV M6G

ES3DV M6G

For Reference Only

Part Number ES3DV M6G
PNEDA Part # ES3DV-M6G
Description DIODE GEN PURP 200V 3A DO214AB
Manufacturer Taiwan Semiconductor Corporation
Unit Price Request a Quote
In Stock 7,722
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 3 - Nov 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

ES3DV M6G Resources

Brand Taiwan Semiconductor Corporation
ECAD Module ECAD
Mfr. Part NumberES3DV M6G
CategorySemiconductorsDiodes & RectifiersRectifiers - Single

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ES3DV M6G Specifications

ManufacturerTaiwan Semiconductor Corporation
Series-
Diode TypeStandard
Voltage - DC Reverse (Vr) (Max)200V
Current - Average Rectified (Io)3A
Voltage - Forward (Vf) (Max) @ If900mV @ 3A
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)20ns
Current - Reverse Leakage @ Vr10µA @ 200V
Capacitance @ Vr, F45pF @ 4V, 1MHz
Mounting TypeSurface Mount
Package / CaseDO-214AB, SMC
Supplier Device PackageDO-214AB (SMC)
Operating Temperature - Junction-55°C ~ 150°C

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