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ESH1B R3G

ESH1B R3G

For Reference Only

Part Number ESH1B R3G
PNEDA Part # ESH1B-R3G
Description DIODE GEN PURP 100V 1A DO214AC
Manufacturer Taiwan Semiconductor Corporation
Unit Price Request a Quote
In Stock 7,128
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 12 - Jun 17 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

ESH1B R3G Resources

Brand Taiwan Semiconductor Corporation
ECAD Module ECAD
Mfr. Part NumberESH1B R3G
CategorySemiconductorsDiodes & RectifiersRectifiers - Single

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ESH1B R3G Specifications

ManufacturerTaiwan Semiconductor Corporation
Series-
Diode TypeStandard
Voltage - DC Reverse (Vr) (Max)100V
Current - Average Rectified (Io)1A
Voltage - Forward (Vf) (Max) @ If900mV @ 1A
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)15ns
Current - Reverse Leakage @ Vr1µA @ 100V
Capacitance @ Vr, F16pF @ 4V, 1MHz
Mounting TypeSurface Mount
Package / CaseDO-214AC, SMA
Supplier Device PackageDO-214AC (SMA)
Operating Temperature - Junction-55°C ~ 175°C

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Current - Average Rectified (Io)

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Voltage - Forward (Vf) (Max) @ If

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Capacitance @ Vr, F

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-55°C ~ 175°C

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