FCH023N65S3L4
For Reference Only
| Part Number | FCH023N65S3L4 |
| PNEDA Part # | FCH023N65S3L4 |
| Description | MOSFET N-CH 650V 75A TO247 |
| Manufacturer | ON Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 8,010 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 16 - May 21 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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FCH023N65S3L4 Resources
| Brand | ON Semiconductor |
| ECAD Module |
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| Mfr. Part Number | FCH023N65S3L4 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
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FCH023N65S3L4 Specifications
| Manufacturer | ON Semiconductor |
| Series | SuperFET® III |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650V |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 23mOhm @ 37.5A, 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 7.5mA |
| Gate Charge (Qg) (Max) @ Vgs | 222nC @ 10V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 7160pF @ 400V |
| FET Feature | - |
| Power Dissipation (Max) | 595W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247 |
| Package / Case | TO-247-4 |
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Manufacturer IXYS Series TrenchMV™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 130A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 9.1mOhm @ 25A, 10V Vgs(th) (Max) @ Id 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 104nC @ 10V Vgs (Max) - Input Capacitance (Ciss) (Max) @ Vds 5080pF @ 25V FET Feature - Power Dissipation (Max) 360W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-263 (IXFA) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Manufacturer Microsemi Corporation Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 60A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 130mOhm @ 28A, 10V Vgs(th) (Max) @ Id 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs 280nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 11300pF @ 25V FET Feature - Power Dissipation (Max) 1040W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-264 Package / Case TO-264-3, TO-264AA |
