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FCH041N65F-F155

FCH041N65F-F155

For Reference Only

Part Number FCH041N65F-F155
PNEDA Part # FCH041N65F-F155
Description MOSFET N-CH 650V 76A TO247
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 7,992
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 20 - May 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FCH041N65F-F155 Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFCH041N65F-F155
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FCH041N65F-F155, FCH041N65F-F155 Datasheet (Total Pages: 10, Size: 491.06 KB)
PDFFCH041N65F-F155 Datasheet Cover
FCH041N65F-F155 Datasheet Page 2 FCH041N65F-F155 Datasheet Page 3 FCH041N65F-F155 Datasheet Page 4 FCH041N65F-F155 Datasheet Page 5 FCH041N65F-F155 Datasheet Page 6 FCH041N65F-F155 Datasheet Page 7 FCH041N65F-F155 Datasheet Page 8 FCH041N65F-F155 Datasheet Page 9 FCH041N65F-F155 Datasheet Page 10

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FCH041N65F-F155 Specifications

ManufacturerON Semiconductor
SeriesFRFET®, SuperFET® II
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C76A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs41mOhm @ 38A, 10V
Vgs(th) (Max) @ Id5V @ 7.6mA
Gate Charge (Qg) (Max) @ Vgs294nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds13020pF @ 100V
FET Feature-
Power Dissipation (Max)595W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247 Long Leads
Package / CaseTO-247-3

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