FCH043N60
For Reference Only
| Part Number | FCH043N60 |
| PNEDA Part # | FCH043N60 |
| Description | MOSFET N-CH 600V 75A TO247 |
| Manufacturer | ON Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 8,172 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 17 - Jun 22 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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FCH043N60 Resources
| Brand | ON Semiconductor |
| ECAD Module |
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| Mfr. Part Number | FCH043N60 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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FCH043N60 Specifications
| Manufacturer | ON Semiconductor |
| Series | SuperFET® II |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 43mOhm @ 38A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 215nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 12225pF @ 400V |
| FET Feature | - |
| Power Dissipation (Max) | 592W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247-3 |
| Package / Case | TO-247-3 |
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Manufacturer Nexperia USA Inc. Series Automotive, AEC-Q101, TrenchMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 80V Current - Continuous Drain (Id) @ 25°C 30A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 27mOhm @ 5A, 10V Vgs(th) (Max) @ Id 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs 19.5nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1306pF @ 25V FET Feature - Power Dissipation (Max) 62W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package LFPAK33 Package / Case SOT-1210, 8-LFPAK33 |
Manufacturer STMicroelectronics Series MDmesh™ II FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 29A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 105mOhm @ 14.5A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 83.6nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 2722pF @ 100V FET Feature - Power Dissipation (Max) 210W (Tc) Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247-3 Package / Case TO-247-3 |
Manufacturer Alpha & Omega Semiconductor Inc. Series * FET Type - Technology - Drain to Source Voltage (Vdss) - Current - Continuous Drain (Id) @ 25°C - Drive Voltage (Max Rds On, Min Rds On) - Rds On (Max) @ Id, Vgs - Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) - Input Capacitance (Ciss) (Max) @ Vds - FET Feature - Power Dissipation (Max) - Operating Temperature - Mounting Type Surface Mount Supplier Device Package TO-252 Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
